GaN 2DEG Semiconductor Structure Without Selective Area Growth
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Solution Overview
Problem
Existing Group III nitride semiconductor devices face challenges in controlling the morphology during selective area growth, leading to complex processing and potential damage to the crystal structure, which affects the performance and stability of the devices.
Innovation Solution
A semiconductor device structure is designed with a substrate, interface generating two-dimensional charge carrier gas, and specific electrode configurations, including regions with dopant atoms of different types, where the dopant atoms in certain regions have electrical activity while others do not, to maintain better transport properties and stability, avoiding damage to the crystal structure and simplifying the processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If selective area growth is used to process semiconductor layers near the gate electrode or anode, then the desired device structure can be realized, but the morphology becomes larger and more complex, making process control relatively complicated
Solution Approach 1:
The patent extracts the problematic selective area growth process and replaces it with a simpler doping process. Specifically, the invention introduces a doping layer with different doping types (first type and second type) in the first semiconductor layer to achieve the desired device structure without relying on complex selective area growth, thereby simplifying process control while maintaining structural adaptability
Solution Approach 2:
The patent changes the approach from geometric control (selective area growth) to electrical parameter control (doping concentration and type). By adjusting doping parameters (doping type, concentration, depth) in different regions, the invention achieves the desired device characteristics without the morphological complexity associated with selective area growth
2Adaptability or versatility
If selective area growth is used to process semiconductor layers, then the desired device structure can be realized, but damage to the crystal structure occurs
Solution Approach 1:
The patent removes the harmful selective area growth process and replaces it with a gentler doping process. The doping approach introduces the necessary electrical properties without the mechanical and thermal stress that causes crystal structure damage, thereby maintaining both structural integrity and device functionality
Solution Approach 2:
The patent introduces a doping layer as an intermediary mechanism to achieve the desired device structure. Instead of directly manipulating the semiconductor layer morphology through selective area growth, the doping layer serves as a mediator to introduce electrical properties, avoiding direct damage to the crystal structure
3Reliability
If the first regions are made thicker to improve electrical activity, then more dopant atoms are available, but the device area increases
Solution Approach 1:
The patent changes the approach from increasing thickness to increasing doping concentration. By adjusting the doping concentration and depth of the doping layer, the invention achieves the necessary electrical activity without increasing the device thickness, thereby maintaining a compact device area while ensuring sufficient electrical properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively maintains better transport properties of two-dimensional charge carrier gas, achieves improved stability of threshold voltage, and enhances the device's capability to withstand voltage, contributing to better electric field distribution and performance.
Implementation Method 1
an interface, for generating two-dimensional charge carrier gas
Data Source
AI summary
The present disclosure provides a semiconductor device, a manufacturing method, and electronic equipment. The semiconductor device including: a substrate; an interface, for generating two-dimensional charge carrier gas; a first electrode and a second electrode; and a first semiconductor layer of a first type doping formed on the substrate, wherein first regions and a second region are formed in the first semiconductor layer, wherein in the first regions, the dopant atoms of the first type do not have electrical activity, and in the second region, the dopant atoms of the first type have electrical activity; and the second region includes a portion coplanar with the first regions.