GaN-on-Silicon 2DEG Segmentation for Higher-Q Inductors
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Solution Overview
Problem
The Q value of inductors fabricated on aluminum gallium nitride (AlGaN) layers in gallium nitride (GaN) structures is limited by the two-dimensional electron gas (2DEG) layer that forms at the interface, adversely impacting the quality of the inductor.
Innovation Solution
A gallium nitride (GaN)-on-silicon structure is developed where the 2DEG layer is made discontinuous by forming 2DEG segments separated by gaps, either through a p-doped GaN layer or by creating trenches in the structure, which enhances the Q value of on-chip inductors without affecting their inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an inductor is fabricated on an aluminum gallium nitride (AlGaN) layer of a gallium nitride (GaN) structure, then the inductor can be integrated into GaN-based electronic devices, but the Q value is limited by the two-dimensional electron gas (2DEG) layer that forms at the interface
Solution Approach 1:
The patent applies segmentation by dividing the continuous 2DEG layer into separate 2DEG segments through the introduction of barrier regions. These barrier regions are created by modifying the AlGaN layer composition or structure at specific locations, which interrupts the continuous electron gas formation. This segmentation reduces the harmful effects of the 2DEG layer on inductor performance while maintaining beneficial 2DEG regions for other device functions.
Solution Approach 2:
The patent implements local quality by creating spatially varying properties in the AlGaN layer. Different regions of the AlGaN layer have different aluminum compositions or structural characteristics - some regions maintain high electron mobility for device operation, while other regions are designed with lower electron density or disrupted 2DEG formation to serve as barriers. This local differentiation allows simultaneous optimization of conductive and barrier regions.
2Reliability
If the 2DEG layer is made discontinuous by forming 2DEG segments separated by gaps, then the Q value of on-chip inductors is enhanced, but the device structure becomes more complex
Solution Approach 1:
The patent uses segmentation to create discontinuous 2DEG regions by introducing barrier segments within the AlGaN layer. These barriers are formed through localized composition changes or structural modifications during the growth process, dividing the continuous electron gas into discrete segments. This approach enhances Q value by reducing parasitic effects while maintaining a relatively streamlined fabrication process.
Solution Approach 2:
The patent applies parameter changes by modifying the aluminum composition ratio or thickness of the AlGaN layer at specific locations to create barrier regions. By adjusting these material parameters locally, the 2DEG formation is controlled to be discontinuous, achieving higher Q values without requiring fundamentally new device architectures or complex multi-step fabrication sequences.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of inductors with higher Q values and maintains the inductance, effectively addressing the limitations imposed by the 2DEG layer in traditional GaN-based inductor designs.
Implementation Method 1
the 2DEG layer is depleted by a p-doped GaN layer that is disposed over a portion of the AlGaN layer
Implementation Method 2
the two-dimensional electron gas (2DEG) layer that forms at the interface of the AlGaN layer and the GaN layer
Data Source
AI summary
A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.