GaN Test Structures Using Alternating Metal Patterns for Small Defects
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Solution Overview
Problem
Existing GaN-based high-voltage devices face challenges in detecting defects efficiently due to their large component spacing, which masks smaller defects, and current techniques fail to accurately identify these defects.
Innovation Solution
Incorporating test structures with conductive patterns that emulate GaN-based device components, formed with smaller pitches and configurations such as alternately arranged or MIM structures, to detect defects by examining electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If test structures with smaller pitches are used to detect smaller defects, then defect detection sensitivity is improved, but device complexity increases
Solution Approach 1:
The test structure is segmented into multiple conductive patterns arranged in an alternating configuration (first conductive pattern, second conductive pattern, first conductive pattern, etc.). This segmentation allows the creation of a compact test structure with smaller pitch that can detect smaller defects while maintaining manageable complexity through modular repetition of the alternating pattern.
Solution Approach 2:
The test structure transitions from a single-layer conductive pattern to a multi-layer alternating arrangement. By stacking conductive patterns in multiple layers with alternating configurations, the test structure achieves smaller effective pitch and enhanced defect detection sensitivity without proportionally increasing planar complexity.
2Ease of manufacture
If larger component spacing is used in GaN-based devices, then manufacturing ease is improved, but defect detection capability deteriorates
Solution Approach 1:
The alternating conductive patterns serve as an intermediary test structure that bridges the gap between large device component spacing and the need for small pitch defect detection. The test structure with its finer pitch acts as a mediator that can reveal defects smaller than the main device component spacing without requiring changes to the actual device geometry.
Solution Approach 2:
The test structure creates a scaled-down copy or representation of the device's conductive components with smaller pitch. By copying the essential features of the device's conductive patterns at a reduced scale, the test structure enables detection of smaller defects while the actual device maintains its larger, easier-to-manufacture component spacing.
Data Source
AI summary
A semiconductor device includes a transistor comprising: a plurality of layers, wherein each of the plurality of layers has at least one Group III-V compound material; a gate electrode operatively coupled to at least one of the plurality of layers; a source electrode disposed on a first side of the gate electrode; a drain electrode disposed on a second side of the gate electrode; a field plate disposed between the gate electrode and the drain electrode; and a plurality of conductive lines disposed above the gate electrode, the source electrode, and the drain electrode. The semiconductor device further includes a plurality of test structures, wherein each of the test structures, including a first metal pattern and a second metal pattern, emulates at least one of the gate electrode, the source electrode, the drain electrode, the field plate, or at least one of the plurality of conductive lines.