GaN Power Amplifier Input Harmonic Termination Circuit

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Solution Overview

Problem

Designing broadband power amplifiers using GaN-based devices is challenging due to nonlinear input capacitance generating harmonics and intermodulation distortion, low drain-source capacitance, and difficulty in tuning for high fractional bandwidth and efficiency, especially with conventional output impedance matching circuits that require high D2 inductance and are inefficient.

Innovation Solution

The implementation of an input-side harmonic termination circuit with a bondwire connection and RF capacitor, and an output-side harmonic termination circuit with integrated capacitance and inductance, reduces D2 inductance and controls second harmonic impedance across a wide fractional bandwidth, enhancing efficiency and linearity through equivalent shunt capacitance that increases drain-source capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional output impedance matching circuits are used, then broadband amplification can be achieved, but efficiency drops significantly due to high D2 inductance requirements

Engineering Contradiction:
Improvebroadband amplification capabilityVSAvoidefficiency
Core Design Contradiction:
Adaptability or versatilityVSLoss of energy

Solution Approach 1:

The patent changes the impedance parameters at the second harmonic frequency by introducing harmonic termination circuits that provide specific impedance values (e.g., open circuit or short circuit conditions) at the second harmonic. This allows the circuit to maintain broadband amplification capability while reducing the required D2 inductance value, thereby improving efficiency by reducing energy losses associated with high inductance.

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If GaN-based devices are used to achieve high power density, then efficiency improves, but nonlinear input capacitance generates harmonics and intermodulation distortion

Engineering Contradiction:
ImproveefficiencyVSAvoidharmonics and intermodulation distortion
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent converts the harmful effect of nonlinear input capacitance generating second harmonic frequencies into a beneficial effect by deliberately designing harmonic termination circuits that control the second harmonic impedance. The second harmonic energy, which would normally cause distortion and inefficiency, is now controlled to improve overall amplifier performance, linearity, and efficiency simultaneously.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Adaptability or versatility

If broadband operation is achieved with fractional bandwidth over 20 percent, then multi-band amplification is enabled, but harmonic control becomes increasingly difficult

Engineering Contradiction:
Improvefractional bandwidthVSAvoidharmonic control difficulty
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent segments the frequency spectrum by treating the second harmonic frequency as a separate control target from the fundamental broadband operation. By introducing dedicated harmonic termination circuits specifically tuned to control second harmonic impedance, the patent enables broadband operation (fractional bandwidth > 20%) while managing harmonic control independently, thus reducing the complexity of simultaneous broadband and harmonic control.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10541653B2Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
Publication Date: 2020.01.21 NXP USA INC
  • US10541653B2 patent drawing
  • US10541653B2 patent drawing
  • US10541653B2 patent drawing

AI summary

Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an input impedance matching circuit, and an input-side harmonic termination circuit. The input impedance matching circuit includes a harmonic termination circuit, which in turn includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. The input impedance matching circuit also includes a second inductance (a second plurality of bondwires), a third inductance (a third plurality of bondwires), and a second capacitance coupled in a T-match configuration between the input lead and the transistor input. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.