GaN Power Amplifier and Switch Integration Without Impedance Matching
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Solution Overview
Problem
Existing multi-band radio frequency power amplifier circuits require a large transformer for impedance matching, which cannot be housed in IC packages due to its size, leading to indirect connections between the power amplifier and switch, resulting in increased size and complexity.
Innovation Solution
A high-power, high-voltage multi-band RF power amplifier circuit is designed without an intervening impedance matching network, using narrowband impedance matching networks and a direct connection between the power amplifier and switch, allowing for integration within IC packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a wideband transformer is used for impedance matching between the power amplifier and switch, then impedance matching is achieved, but the circuit size increases and integration into IC packages becomes impossible
Solution Approach 1:
The patent removes the wideband transformer from the circuit architecture entirely. Instead of using a transformer for impedance matching between the GaN FET power amplifier and the GaN HEMT switch, the invention employs a direct connection with narrowband impedance matching networks integrated into the IC package, thereby eliminating the large external transformer component.
Solution Approach 2:
The patent integrates the power amplifier and switch functions into a single IC package by combining the GaN FET power amplifier circuitry with the GaN HEMT switch circuitry in one integrated device. This merging eliminates the need for external transformers and enables direct integration that would be impossible with separate components requiring large impedance matching networks.
2Reliability
If a wideband transformer is used for impedance matching, then the power amplifier can operate, but the circuit complexity increases due to indirect connections
Solution Approach 1:
The patent extracts and removes the wideband transformer component from the signal path, replacing it with a direct connection between the power amplifier output and switch input. This elimination of the transformer simplifies the circuit architecture by removing unnecessary impedance matching stages while maintaining proper operation through integrated narrowband matching networks.
Solution Approach 2:
Instead of using a wideband transformer to achieve broadband impedance matching as in conventional designs, the patent inverts the approach by using narrowband impedance matching networks that are optimized for specific frequency bands, allowing direct connection without the need for a wideband matching component.
3Reliability
If the power amplifier and switch are housed in separate IC packages, then each component can be optimized independently, but the overall system size increases and integration is reduced
Solution Approach 1:
The patent merges the power amplifier and switch into a single integrated IC package, combining the GaN FET power amplifier and GaN HEMT switch in one device. This integration reduces the overall system size by eliminating the need for separate packages and external interconnections, while the internal architecture maintains independent optimization of each functional block.
Data Source
AI summary
A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.