GaN Barrier Structure for Crack Blocking in Semiconductor Dicing
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Solution Overview
Problem
Existing semiconductor devices face challenges in protecting electrical components during wafer dicing, as cracks generated between the GaN-containing composite layer and the seed layer can enter the active region, affecting the yield and quality of the semiconductor device.
Innovation Solution
A semiconductor device with a barrier structure that penetrates the GaN-containing composite layer and the seed layer, forming a sealing structure with a sealing component, effectively blocking cracks and preventing moisture penetration during wafer dicing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure without a barrier structure is used, then the manufacturing process is simpler, but cracks generated during wafer dicing can enter the active region, reducing yield and quality
Solution Approach 1:
The device is segmented into functional regions: an active region containing electrical components and a peripheral region containing a seal region. The barrier structure is specifically positioned in the seal region, dividing the device structure to provide protection only where needed during dicing, rather than requiring a complete structural overhaul of the entire device.
Solution Approach 2:
The barrier structure and sealing component are formed in advance during the manufacturing process, before the wafer dicing step. This preliminary action ensures that when dicing occurs, the cracks are already blocked by the pre-formed barrier structure, preventing them from entering the active region and protecting the electrical components.
2Reliability
If a barrier structure is added to prevent cracks during dicing, then the yield and quality improve, but the manufacturing process becomes more complex
Solution Approach 1:
The barrier structure and sealing component are merged to form an integrated sealing structure. This combination is formed as a unified structure during the manufacturing process, reducing the need for separate assembly steps and simplifying the overall manufacturing complexity while maintaining the crack-blocking function.
Solution Approach 2:
The barrier structure acts as an intermediary element positioned between the active region and the peripheral seal region. It mediates the stress and crack propagation during dicing, blocking harmful effects before they can reach the electrical components, while being integrated into the existing device architecture.
3Object-affected harmful factors
If the barrier structure penetrates through the GaN-containing composite layer and seed layer, then crack propagation is effectively blocked, but the structural complexity increases
Solution Approach 1:
The barrier structure is implemented with local quality by positioning it specifically in the seal region of the peripheral region, where it is most needed to block cracks during dicing. The structure penetrates through the GaN-containing composite layer and seed layer only in this specific location, providing targeted protection without requiring similar structures throughout the entire device, thus minimizing overall structural complexity.
Data Source
AI summary
A semiconductor device includes and an active region and a peripheral region. The peripheral region includes a seal region. The semiconductor device includes a substrate and a seed layer one the substrate. The semiconductor device also includes a GaN-containing composite layer on the seed layer, and the GaN-containing composite layer is disposed in the active region and the peripheral region. The semiconductor device also includes a gate electrode, a source electrode and a drain electrode disposed on the GaN-containing composite layer within the active region. The source electrode and the drain electrode are disposed at two opposite sides of the gate electrode. The semiconductor device further includes a sealing structure, and the sealing structure includes a barrier structure and a seal component in the seal region. The barrier structure is disposed around the active region. The barrier structure penetrates the GaN-containing composite layer and the seed layer.