Integral Heat Spreader Packaging for GaN Bias and Cooling
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Solution Overview
Problem
Conventional heatsink technologies and electronics packaging architectures fail to both electrically bias semiconductor substrates and provide efficient heat removal for gallium nitride semiconductor devices.
Innovation Solution
The development of electronic packages with an integral heat spreader featuring a ceramic-containing layer sandwiched between metal layers, allowing for efficient thermal coupling and separate voltage biasing of semiconductor devices, enabling co-packaging of multiple gallium nitride devices in a single package with improved thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional heatsink technologies are used, then heat removal is provided, but electrical biasing of semiconductor substrates cannot be achieved
Solution Approach 1:
The heatsink structure is designed to perform multiple functions: it provides heat removal through its thermally conductive metal layers while simultaneously enabling electrical biasing of semiconductor substrates through electrically conductive pathways integrated into the same structure. This multi-functional design resolves the contradiction by making a single component serve both thermal management and electrical biasing purposes.
Solution Approach 2:
A ceramic layer is introduced as an intermediary between the metal layers of the heatsink. This ceramic layer provides electrical isolation while maintaining thermal conduction, allowing the heatsink to provide both heat removal and electrical biasing capabilities to different semiconductor substrates mounted on its surfaces.
2Productivity
If multiple gallium nitride semiconductor devices are co-packaged, then circuit functionality is improved, but thermal management complexity increases
Solution Approach 1:
Multiple gallium nitride semiconductor devices are co-packaged within a single intermediate electronic package that shares a common heatsink structure. This merging approach allows multiple devices to function together in power conversion circuits while using a unified thermal management system, reducing overall complexity compared to separate packaging for each device.
Solution Approach 2:
The heatsink structure is segmented into distinct regions with separate ceramic layers and conductive pathways that can independently bias different semiconductor devices. This segmentation allows each device to be electrically isolated and biased independently while sharing the common thermal management infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces thermal resistance, enhances switching speed and circuit stability, and maintains safe operating temperatures, enabling higher performing circuits in a compact form factor.
Implementation Method 1
An integral heat spreader is thermally coupled to the first and the second semiconductor dies
Implementation Method 2
the integral heat spreader includes a ceramic-containing layer sandwiched between a bottom metal layer and a top metal layer
Data Source
AI summary
An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.