GaN Semiconductor Structure With Mg Blocking Layer for Leakage Control
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Solution Overview
Problem
Conventional manufacturing methods for semiconductor devices using gallium nitride (GaN) materials face issues with leakage currents due to pits and rough surfaces, leading to reduced reliability and high manufacturing costs.
Innovation Solution
A method involving the formation of a semiconductor device with a native substrate, sequential layers including a thick GaN substrate, leakage current stop layer, and current blocking layer formed by Mg ion implantation, along with a GaN buffer layer and metallic interlayer, allowing for the recycling of substrates and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a current blocking layer is formed by conventional regrowth methods, then the semiconductor device can block current, but pits and rough surfaces are generated that cause high current leakage
Solution Approach 1:
The patent applies preliminary action by forming a planarization layer before the current blocking layer to pre-establish a flat surface. This prevents the regrowth process from creating pits and rough surfaces, while still maintaining the current blocking capability of the blocking layer.
Solution Approach 2:
The patent introduces a planarization layer as an intermediary between the substrate and the current blocking layer. This intermediary layer serves dual functions: it provides a flat surface that prevents leakage paths during regrowth, and it allows the current blocking layer to function effectively without being compromised by surface defects.
2Productivity
If conventional manufacturing methods are used, then the semiconductor device can be produced, but leakage current occurs due to surface defects reducing reliability
Solution Approach 1:
The planarization layer is formed in advance before subsequent processing steps, ensuring that surface defects are prevented before they can compromise device reliability. This maintains manufacturing productivity while improving reliability outcomes.
Solution Approach 2:
The patent converts the potentially harmful regrowth process into a beneficial one by introducing the planarization layer. The regrowth that would normally create defects is instead guided to produce a uniform, defect-free current blocking layer, turning a harmful process into a beneficial one.
3Ease of manufacture
If substrate recycling is implemented, then manufacturing cost is reduced, but additional processing steps are required
Solution Approach 1:
The patent segments the manufacturing process into distinct modules including substrate preparation, layer formation, and substrate recycling. This modular approach allows the substrate to be reused after removing only the necessary layers, reducing material costs while keeping the added process complexity manageable through systematic organization.
Solution Approach 2:
The patent implements substrate recycling by discarding only the used semiconductor layers while recovering and reusing the expensive substrate. This selective discarding and recovery approach reduces manufacturing costs significantly, with the added processing steps offset by the substantial material cost savings.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents leakage currents, enhances device reliability, and reduces manufacturing costs by recycling substrates, while maintaining high speed and thermal stability through two-dimensional electron gas mobility.
Implementation Method 1
implanting Mg ions to the GaN buffer layer to form a current blocking layer on the leakage current stop layer
Data Source
AI summary
A method of forming a semiconductor device and the structure of the semiconductor device are provided. The manufacturing method includes the following steps of: providing a native substrate; sequentially forming a first nucleation layer, a thick GaN substrate layer, a second nucleation layer, an AlGaN barrier layer, a GaN channel layer and a leakage current stop layer; forming an aperture area through the leakage current stop layer; forming a GaN buffer layer; implanting Mg ions to the GaN buffer layer to form a current blocking layer; forming a GaN drift layer; forming a metallic interlayer on the GaN drift layer and transferring the GaN drift layer on a transferred substrate through the metallic interlayer; removing a semiconductor stack; forming a source contact, a gate contact and a drain contact.