GaN Substrate Buffer Layer Amorphization for Leakage Reduction
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Solution Overview
Problem
GaN-based semiconductor devices face current collapse issues due to defects in carbon-doped buffer layers, which lead to increased leakage current and reduced device performance.
Innovation Solution
A semiconductor substrate with a buffer layer and GaN layers is developed, where neutral atoms are implanted to amorphize the buffer layer, increasing its resistance and reducing leakage current, and a mask layer is used to cover regions with poor GaN quality, allowing for epitaxial growth of higher-quality GaN layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the buffer layer resistance is increased to reduce leakage current, then device leakage is reduced, but GaN layer quality deteriorates due to defects in the high-resistance buffer layer
Solution Approach 1:
The patent introduces an intermediary mask layer that acts as a barrier between the defective buffer layer regions and the GaN layer growth interface. This intermediary prevents defect propagation during epitaxial growth, allowing the buffer layer to have high resistance for leakage reduction while the GaN layer grows with high quality on top of the masked regions
Solution Approach 2:
The patent applies local quality by creating regions of different properties within the buffer layer through selective doping and using the mask layer to protect specific areas. The buffer layer has high resistance in doped regions while maintaining better quality in masked regions, and the GaN layer grows with high quality where protected, thus resolving the contradiction between buffer layer resistance and GaN layer quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a semiconductor substrate with a higher resistance buffer layer and improved GaN layer quality, reducing leakage current and enhancing electronic transmission performance.
Implementation Method 1
implanting the neutral atoms into the buffer layer can contribute to amorphization of the buffer layer that the buffer layer can have a higher resistance
Implementation Method 2
the epitaxial growing process is further performed to form another GaN layer
Data Source
AI summary
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. The mask layer is disposed on the buffer layer and located on the doped regions. The first GaN layer is disposed on the buffer layer and covers the mask layer.