GaN Buffer Layer Structure With Irregular Dislocation Blocking
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Solution Overview
Problem
Existing semiconductor devices face challenges in handling high voltage and high current while maintaining reliability and minimizing power loss, particularly in environments with high temperatures, due to defects such as dislocations that affect electrical characteristics.
Innovation Solution
Incorporation of a dislocation blocking layer with irregularly spaced patterns within the high-resistance layer to reduce dislocation density, combined with a buffer layer and channel layer structure using GaN-based materials, enhances the semiconductor device's ability to handle high power and maintain electrical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional buffer layer structure is used, then the device structure is simple, but dislocation density is high leading to poor electrical characteristics
Solution Approach 1:
The buffer layer is segmented into multiple high-resistance layers (first, second, third high-resistance layers) with dislocation blocking layers inserted between them. This segmentation allows dislocations to be blocked at each interface, preventing their propagation to the channel layer while maintaining the overall buffer function. The irregular interval arrangement of dislocation blocking patterns further enhances dislocation blocking effectiveness.
Solution Approach 2:
Dislocation blocking layers are introduced as intermediary structures between the high-resistance layers. These blocking layers contain irregularly spaced patterns that act as dislocation sinks, absorbing and blocking dislocations before they can reach the channel layer. This intermediary structure effectively decouples the buffer function from the dislocation propagation issue.
2Reliability
If high-resistance layers are added to reduce dislocation, then dislocation blocking improves, but manufacturing complexity increases
Solution Approach 1:
Multiple functions are merged into the buffer layer structure: high-resistance layers provide both electrical isolation and dislocation blocking, while the irregularly spaced patterns within these layers simultaneously serve as dislocation sinks and structural anchors. The dislocation blocking layers are integrated within the buffer layer rather than being separate components, streamlining the manufacturing process.
Solution Approach 2:
The dislocation blocking layers contain patterns arranged at irregular intervals, creating local variations in dislocation blocking capability. This local quality approach allows dislocations to be blocked at specific critical locations while maintaining overall buffer functionality, optimizing the balance between dislocation blocking and manufacturing complexity.
Data Source
AI summary
A semiconductor device includes a substrate, a buffer layer on the substrate, the buffer layer including a first high-resistance layer and a second high-resistance layer, a first dislocation blocking layer between the first high-resistance layer and the second high-resistance layer, a channel layer on the buffer layer, the channel layer including a material having a first energy band gap, a barrier layer on the channel layer, the barrier layer including a material having a second energy band gap that is different from the first energy band gap, a gate electrode on the barrier layer, and a gate semiconductor layer between the barrier layer and the gate electrode, where the first dislocation blocking layer includes a plurality of first dislocation blocking patterns arranged at irregular intervals.