GaN Channel Structure With P-Type Buried Layer for Gate Leakage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
GaN-based semiconductor devices face issues such as gate leakage, buffer layer leakage, and electric field concentration, which limit their performance and reliability in high-voltage and high-frequency applications.
Innovation Solution
A semiconductor structure is proposed, featuring a substrate with a first P-type buried layer located in the substrate, extending parallel to the channel width, which depletes the two-dimensional electron gas and enhances the semiconductor structure's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional GaN-based semiconductor structures are used, then high electron mobility and wide bandgap advantages are achieved, but gate leakage and buffer layer leakage occur reducing device reliability
Solution Approach 1:
The invention divides the semiconductor structure into distinct functional regions: a first region with high Al content barrier layer for electron confinement, a second region with intermediate Al content for gradient transition, and a third region with low Al content buffer layer for leakage suppression. This spatial segmentation of Al content addresses both high electron mobility requirements and leakage prevention simultaneously.
Solution Approach 2:
The patent applies local quality by creating non-uniform Al content distribution across different regions of the barrier and buffer layers. The Al content is locally optimized: high in the first region for strong 2DEG formation, intermediate in the second region for gradient control, and low in the third region for leakage suppression, thereby resolving the contradiction between performance and reliability.
2Strength
If GaN-based semiconductor devices are designed for high-voltage applications, then breakdown electric field increases, but electric field concentration at gate edges causes premature device breakdown
Solution Approach 1:
The invention implements preliminary action by introducing a third region with low Al content buffer layer before the main active region. This preliminary structure pre-distributes the electric field in a controlled manner, preventing concentration at gate edges and enabling the device to withstand higher breakdown fields without premature failure.
Solution Approach 2:
The patent transitions from uniform two-dimensional electron gas confinement to a three-dimensional graded structure with varying Al content in both lateral and vertical dimensions. This dimensional expansion allows electric field distribution to be controlled throughout the volume, eliminating concentration effects at specific locations while maintaining high breakdown field strength.
3Reliability
If Al content in barrier layer is increased to enhance 2DEG density, then electron mobility improves, but manufacturing complexity and process control difficulty increase
Solution Approach 1:
The invention applies parameter changes by systematically varying the Al content parameter across three distinct regions rather than using a uniform composition. This graded parameter approach achieves high 2DEG density through the high Al content first region while the progressive reduction in Al content through subsequent regions simplifies manufacturing by avoiding abrupt interfaces and reducing process control complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively addresses the issues of gate leakage and electric field concentration, simplifies the manufacturing process, and improves the production efficiency of GaN-based semiconductor devices.
Implementation Method 1
a first P-type buried layer located in the third region, wherein the first P-type buried layer extends along a direction parallel to a channel width... the first P-type buried layer... depletes the two-dimensional electron gas
Data Source
AI summary
A semiconductor structure includes a substrate including a first region, a second region and a third region located between the first region and the second region; a channel structure formed on the substrate; and a first P-type buried layer located in the third region. The first P-type buried layer extends along a direction parallel to a channel width. In the semiconductor structure, the first P-type buried layer is disposed in the substrate, and is configured to deplete the two-dimensional electron gas in the channel structure so as to achieve an enhancement-mode semiconductor structure. With this disposure, the problems of gate leakage, the electric field concentration effect of the gate close to the edge of the drain and the like are avoided, and tedious steps of manufacturing a P-type semiconductor layer above a channel structure in conventional method is avoided, which simplifies the manufacturing method, and effectively improves the production efficiency.