GaN Substrate Growth via Cavity-Induced Stress Separation
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Solution Overview
Problem
The existing methods for manufacturing large GaN substrates for nitride-based semiconductor light emitting devices are complex and costly, requiring improved processes to reduce defects and enhance efficiency.
Innovation Solution
A method involving the formation of a buffer layer on a growth substrate, creating openings and cavities, and growing a semiconductor layer that separates from the substrate through stress applied to the cavities, allowing for a simplified and cost-effective manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If existing methods are used to manufacture large GaN substrates, then substrate size can be increased, but manufacturing complexity and cost increase significantly
Solution Approach 1:
The growth substrate is divided into multiple regions with cavities formed at specific locations. The semiconductor layer is grown separately in each cavity region, allowing independent optimization and control of each segment, which simplifies the overall manufacturing process for large substrates
Solution Approach 2:
The invention transitions from planar growth to three-dimensional cavity-based growth. By forming cavities that extend vertically into the substrate and growing semiconductor layers within these cavities, the manufacturing process gains an additional dimensional degree of freedom, enabling better control over large-area substrate production
2Area of stationary object
If existing methods are used to manufacture large GaN substrates, then substrate size can be increased, but manufacturing cost increases
Solution Approach 1:
Cavities are pre-formed in the growth substrate before semiconductor layer deposition. This preliminary structuring allows for more efficient material utilization and reduces the need for subsequent complex processing steps, thereby lowering manufacturing costs for large substrates
Solution Approach 2:
The invention changes the structural parameters of the substrate by introducing cavities with specific dimensions and distributions. This parameter modification enables optimized semiconductor layer growth that reduces material waste and processing complexity, leading to cost-effective manufacturing of large-area substrates
3Manufacturing precision
If semiconductor layer is grown on buffer layer, then crystal quality improves, but defect reduction is insufficient
Solution Approach 1:
The invention extracts and removes the buffer layer after the semiconductor layer has been grown within the cavities. This extraction eliminates the buffer layer that can serve as a defect source, thereby reducing defects in the final semiconductor product while maintaining the crystal quality benefits of buffered growth
Solution Approach 2:
The cavity structure serves as an intermediary that enables high-quality crystal growth during the manufacturing process, then allows for the removal of the buffer layer to reduce defects. The cavity acts as a temporary mediator that facilitates quality growth but is not present in the final product
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-quality semiconductor substrates with reduced defects, facilitating the growth of nitride-based semiconductor layers while simplifying the manufacturing process and reducing costs.
Implementation Method 1
separating the buffer layer and the semiconductor layer from the growth substrate through stress applied to the plurality of cavities
Data Source
AI summary
A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.