GaN Semiconductor Chip Through-Hole Venting for Distortion Control
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Solution Overview
Problem
The formation of a transformation layer inside a gallium nitride (GaN) wafer during the manufacturing of semiconductor chips can cause distortion due to nitrogen gasification, leading to potential deterioration in the characteristics of the semiconductor element and increased heat generation during chip usage.
Innovation Solution
A semiconductor chip design featuring a chip constituent substrate with a through hole that penetrates from the first surface to the second surface, where the first opening is larger than the second opening, allowing for efficient heat release and nitrogen gas venting during the formation of the transformation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a transformation layer is formed inside the GaN ingot by laser irradiation to divide it into two ingots, then the GaN ingot can be divided into two ingots, but distortion occurs due to nitrogen gasification
Solution Approach 1:
The patent introduces through-holes that segment the GaN ingot structure into regions (first region with semiconductor elements and second region without), allowing controlled nitrogen release paths while maintaining structural integrity. This segmentation enables the division process to proceed without causing overall distortion to the ingot shape.
Solution Approach 2:
The through-holes act as intermediary structures that facilitate nitrogen gas release during laser irradiation. These holes provide dedicated channels for gas evacuation, mediating between the nitrogen gasification process and the surrounding GaN structure, thereby preventing uncontrolled distortion while enabling efficient ingot division.
2Ease of manufacture
If nitrogen gas is released during transformation layer formation, then the transformation layer can be formed, but distortion occurs and semiconductor element characteristics deteriorate
Solution Approach 1:
The patent extracts nitrogen gas from the transformation zone by providing through-holes that extend to the surface. This extraction mechanism removes the harmful nitrogen gas accumulation that would otherwise cause distortion and damage to semiconductor elements, allowing the transformation layer formation to proceed reliably.
Solution Approach 2:
The patent converts the harmful effect of nitrogen gasification into a beneficial process by designing through-holes that channel the nitrogen release. The nitrogen gas, which would normally cause distortion, is now utilized to clear the transformation zone of impurities while the through-holes ensure this release occurs in a controlled manner that protects the semiconductor elements.
3Ease of manufacture
If the first opening and second opening of the through hole are the same size, then manufacturing is simpler, but heat dissipation efficiency is reduced
Solution Approach 1:
The patent employs asymmetric through-hole geometry where the first opening (at the semiconductor element side) has a different size than the second opening (at the opposite side). This asymmetry is specifically designed to optimize heat dissipation by creating a tapered structure that enhances convective heat transfer and gas flow, allowing efficient thermal management while maintaining manufacturability through standard laser drilling processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses distortion in the semiconductor chip by facilitating heat dissipation and nitrogen release, thereby maintaining the integrity of the semiconductor element's characteristics and preventing heat-induced issues.
Implementation Method 1
allowing for efficient heat release and nitrogen gas venting during the formation of the transformation layer
Implementation Method 2
nitrogen gas venting during the formation of the transformation layer
Data Source
AI summary
A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.