GaN Power Amplifier Circuit for Dividing Transistor Voltage Stress
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional chargers, particularly those using silicon-based transistors in class-E or class-D power amplifiers, face challenges with high voltage damage, limiting the efficiency and reliability of wireless charging systems for devices like electric cars.
Innovation Solution
The proposed electronic circuit employs a configuration of transistors, capacitors, and diodes to distribute voltage stress evenly, using GaN-based high-electron-mobility transistors and a specific capacitor and diode arrangement to ensure that each transistor experiences no more than half the input voltage, preventing damage and optimizing power transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If silicon-based transistors are used in class-E or class-D power amplifiers, then the charger can transmit power to electronic devices, but relatively great voltage can damage the transistors
Solution Approach 1:
The circuit divides the high voltage stress into multiple segments by using multiple transistors (first transistor, second transistor, third transistor, fourth transistor) connected in series. Each transistor experiences only a portion of the total voltage (no more than half the input voltage), preventing any single transistor from being damaged by excessive voltage while maintaining overall power transmission capability.
2Device complexity
If voltage stress is concentrated on single transistor, then circuit complexity is reduced, but transistor damage occurs
Solution Approach 1:
The voltage stress is segmented across multiple transistors connected in series, with each transistor handling a portion of the total voltage. This segmentation protects individual transistors from damage while the overall circuit maintains a relatively simple structure through systematic arrangement of identical components.
Solution Approach 2:
Capacitors and diodes are introduced as intermediary components to distribute and regulate voltage across the transistor chain. These intermediaries ensure proper voltage division and protection, with capacitors coupled between transistors and diodes providing voltage clamping to maintain each transistor within safe operating limits.
Data Source
AI summary
The electronic circuits and semiconductor device having the same are provided. The electronic circuit includes: a first transistor including a first electrode coupled with an input voltage; a second transistor including a first electrode coupled with a second electrode of the first transistor; a first capacitor coupled between the first transistor and the second transistor; a first diode including a first terminal coupled with the first electrode of the first transistor; a second diode including a first terminal coupled with a second terminal of the first diode and a second terminal coupled with a second electrode of the second transistor; a second capacitor coupled between the first transistor and the first diode; and a third capacitor coupled between the first diode and the second transistor.