GaN Color-Center Quantum Sensors for Room-Temperature Sensing
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Solution Overview
Problem
Existing quantum sensors, particularly those based on diamond NV-color centers, face challenges in scalability and cost-effectiveness due to their small size, making large-scale production economically unfeasible.
Innovation Solution
The development of gallium nitride (GaN) quantum sensors with silicon doping and specific zero-phonon line (ZPL) ranges between 940 nm and 960 nm, allowing for cost-effective, large-scale production and operation at room temperature, utilizing longer laser wavelengths for deeper penetration in samples.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If diamond NV-color center quantum sensors are used, then measurement precision is improved, but manufacturing cost and scalability worsen due to small crystal size limitations
Solution Approach 1:
The patent changes the material parameter from diamond to GaN, and adjusts the optical parameter by selecting color centers with ZPL in the 940-960 nm range. This allows the quantum sensor to maintain high measurement precision while enabling large-scale, cost-effective production through semiconductor manufacturing processes
Solution Approach 2:
The patent uses composite material strategy by combining GaN with specifically engineered color centers (having particular ZPL characteristics) to create a quantum sensor that achieves both the measurement precision of diamond-based sensors and the manufacturing scalability of semiconductor materials
2Measurement precision
If diamond NV-color center quantum sensors are used, then measurement precision is improved, but scalability worsens due to small crystal size
Solution Approach 1:
The patent changes the material system from diamond to GaN, which allows for much larger crystal growth and production. The selection of color centers with ZPL between 940-960 nm maintains the quantum optical properties needed for precise measurement while enabling scalability through standard semiconductor fabrication
Solution Approach 2:
The patent effectively creates a copy of the successful diamond NV-center quantum sensor concept using GaN material system. This allows replication and scaling of quantum sensor production using established semiconductor manufacturing processes, achieving both precision and scalability
3Measurement precision
If shorter laser wavelengths are used for excitation, then measurement precision is improved, but penetration depth in samples worsens
Solution Approach 1:
The patent changes the optical excitation parameter by selecting color centers with zero-phonon line at 940-960 nm, which requires longer wavelength laser excitation. This parameter change simultaneously improves penetration depth in biological samples while maintaining the quantum measurement precision through the preserved optical contrast and spin properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
GaN quantum sensors provide precise measurements of physical properties like temperature and magnetic field strength at room temperature, offering scalability and cost-effectiveness, suitable for biosensing applications.
Implementation Method 1
gallium nitride (GaN) with a color center with a zero-phonon line (ZPL) between about 940 nanometers (nm) and about 960 nm
Data Source
AI summary
In one form of the present disclosure, a quantum sensor comprises a quantum device. The quantum device comprises gallium nitride (GaN) with a color center with a zero-phonon line (ZPL) between about 900 nanometers (nm) and about 990 nm. The GaN can be doped with silicon (Si) and have low carbon (C) and oxygen (O) impurities. In one example, the quantum device is GaN doped with about 1016 atoms of Si per cm3, having less than about 8×1015 C atoms per cm3 and less than about 6×1015 O atoms per cm3, and a Ga vacancy density less than about 1016 vacancies per cm3.