GaN Short-Circuit Protection via Desaturation Latch

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Solution Overview

Problem

Gallium nitride (GaN) semiconductor technology requires faster short-circuit protection than traditional semiconductors, as GaN devices can withstand a short circuit for only up to 1 microsecond, and existing protection designs are inadequate in speed and prone to false triggering due to increased electrical noise.

Innovation Solution

A circuit with a desaturation detector that includes a logic circuit, latch circuit, and filters to detect short-circuit conditions and switch off the power semiconductor device, incorporating sub-microsecond filters to reduce noise and add propagation delay, ensuring the device is switched off within one-tenth of the defined short-circuit period.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If existing short circuit protection designs are used, then the protection circuit is simple, but the response speed is too slow for GaN devices

Engineering Contradiction:
Improveresponse speedVSAvoidprotection circuit complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The protection circuit is segmented into distinct functional blocks: voltage detection circuitry for monitoring saturation status, logic circuitry for signal processing, and a latch circuit for maintaining the shutdown state. This segmentation allows each component to be optimized for its specific function while achieving the required sub-microsecond response speed for GaN devices.

Inventive Principle:
Principle #1Segmentation

2Reliability

If filters are added to reduce noise, then false triggering is prevented, but propagation delay increases

Engineering Contradiction:
Improvefalse triggering preventionVSAvoidpropagation delay
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The filter parameters (time constants, cutoff frequencies) are specifically optimized to provide adequate noise filtering while maintaining sub-microsecond response. The voltage detection circuitry uses carefully selected RC time constants that filter electrical noise from GaN switching without introducing excessive propagation delay, achieving a balance between reliability and speed.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the response time is reduced to protect GaN devices, then device protection is improved, but the circuit becomes more sensitive to electrical noise

Engineering Contradiction:
Improvedevice protectionVSAvoidelectrical noise sensitivity
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The latch circuit provides positive feedback to maintain the shutdown state once a short-circuit condition is detected. This feedback mechanism ensures that the protection remains active even in the presence of electrical noise, preventing false shutdowns while maintaining rapid response to actual short-circuit conditions. The feedback loop reinforces the protective state until properly reset.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10903830B2Short-circuit protection for a power semiconductor device
Publication Date: 2021.01.26 EAST WEST MFG
  • US10903830B2 patent drawing
  • US10903830B2 patent drawing
  • US10903830B2 patent drawing

AI summary

A desaturation detector receives signals from a gate driver and circuitry that indicate whether a power semiconductor device is on and in desaturation. A logic circuit produces a signal as a function of the signals, from which a latch circuit produces an output signal. The signal has first and second values respectively in an as-designed condition, and in a short-circuit condition in which the power semiconductor device is on and in desaturation. The output signal has the first value, and transitioned and latched to the second value in response to a transition to the short-circuit condition, which causes the gate driver to switch the power semiconductor device off. And filter(s) reduce noise within the desaturation detector.