GaN Semiconductor Device Suppressing Current Collapse
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Solution Overview
Problem
GaN-based semiconductor devices suffer from current collapse, a phenomenon where high voltage application increases on-resistance and reduces drain current, adversely affecting device characteristics due to electrical charge traps in current paths.
Innovation Solution
The semiconductor device configuration includes a first conductivity type semiconductor substrate, a GaN-based semiconductor layer, and a lateral semiconductor element with a specific electrode connection and structure that allows the substrate to be fixed to a ground potential, reducing the electric field and suppressing current collapse without degrading semiconductor circuit characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high voltage is applied to GaN-based semiconductor devices, then power handling capability is improved, but current collapse occurs increasing on-resistance and reducing drain current
Solution Approach 1:
A p-type semiconductor region is introduced as an intermediary layer between the n-type semiconductor substrate and the GaN-based semiconductor layer. This intermediate structure modifies the electric field distribution and suppresses current collapse by preventing direct interaction between high voltage stress and charge traps in the current path, thereby maintaining reliable operation at high power levels
2Strength
If conventional GaN-based semiconductor structure is used, then high breakdown strength is achieved, but current collapse adversely affects device characteristics
Solution Approach 1:
The semiconductor structure is segmented into distinct functional regions: an n-type substrate providing mechanical support and basic electrical properties, a p-type intermediate region controlling electric field distribution, and a GaN-based active layer providing high breakdown strength. This segmentation allows each layer to optimize its function while the p-type region specifically addresses current collapse to maintain reliable device characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses current collapse, enhancing field plate effects and reducing on-resistance, making the semiconductor device suitable for power electronics and high-frequency applications while maintaining stable operation.
Implementation Method 1
which is an undesired phenomenon in which application of a high voltage increases an on-resistance and significantly reduces a drain current
Data Source
AI summary
A semiconductor device includes a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate, a GaN-based semiconductor layer on the semiconductor substrate, and a lateral semiconductor element at the GaN-based semiconductor layer and above the semiconductor region, the lateral semiconductor element having a first electrode and a second electrode electrically connected to the semiconductor region.