GaN-Diamond Composite Joining With an Intermediary Oxide Layer
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Solution Overview
Problem
Existing methods for joining gallium nitride (GaN) to diamond substrates result in deterioration of crystallinity, affecting the performance of GaN-based semiconductor devices, and require high-vacuum conditions.
Innovation Solution
A production method involving surface treatments such as oxidation, nitridation, or reduction of gallium oxide layers on GaN and diamond surfaces, followed by joining in atmospheric air with an intermediate layer containing carbon, gallium, and oxygen to maintain crystallinity and eliminate the need for vacuum conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If argon beam irradiation is used to activate surfaces for joining GaN and diamond, then the surfaces can be joined directly in vacuum, but the crystallinity of both GaN and diamond deteriorates
Solution Approach 1:
An intermediate layer containing carbon, gallium, and oxygen is introduced between the GaN layer and diamond layer. This intermediate layer acts as a mediator that enables direct joining of GaN and diamond without requiring argon beam irradiation, thereby maintaining the crystallinity of both materials while achieving reliable joining. The intermediate layer is formed through surface treatments (oxidation, nitridation, or reduction) of the GaN surface followed by contact with diamond in atmospheric air.
2Ease of manufacture
If high vacuum conditions are used for direct joining of GaN and diamond, then the joining process can proceed, but the device complexity increases due to requiring vacuum joining equipment
Solution Approach 1:
The joining process is changed from requiring high vacuum conditions to proceeding in atmospheric air. This parameter change is achieved by introducing the intermediate layer that contains carbon, gallium, and oxygen, which enables direct joining without vacuum equipment. The surface treatments (oxidation, nitridation, or reduction) and subsequent joining are all performed in atmospheric air, eliminating the need for complex vacuum joining devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables robust joining of GaN and diamond layers with suppressed crystallinity deterioration, achieving a shear strength of 0.1 MPa or more without requiring a vacuum, thus improving the operational efficiency and durability of semiconductor devices.
Implementation Method 1
a first base material treatment step of subjecting a surface of a gallium oxide layer of a first base material to one or more of an oxidation treatment, a nitridation treatment, and a reduction treatment to functionalize the surface of the gallium oxide layer
Implementation Method 2
a second base material treatment step of subjecting a surface of a diamond layer of a second base material to an oxidation treatment to functionalize the surface of the diamond layer
Implementation Method 3
a joining step of applying reaction energy to a contact part to join the first base material and the second base material while the surface of the gallium oxide layer that has undergone the first base material treatment step and the surface of the diamond layer that has undergone the second base material treatment step are in a state of being brought into contact with each other
Data Source
AI summary
A composite that includes a gallium nitride layer; an intermediate layer that is formed on a surface of the gallium nitride layer and contains carbon, gallium, and oxygen; and a diamond layer that is joined to the surface of the gallium nitride layer through the intermediate layer.