GaN Semiconductor Dicing via Dielectric Groove Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The production of GaN-based semiconductor elements faces challenges such as crack formation near the interface between the substrate and the GaN-based semiconductor film during dicing, leading to increased costs and reduced productivity due to debris generation and slow etching speeds in existing methods like laser dicing and dry etching.
Innovation Solution
A production method involving the formation of a dielectric film on a GaN-based semiconductor film, followed by etching to create groove-shaped dicing regions, allowing for blade dicing without etching the GaN film, which reduces interlayer cracks and surface chipping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If laser dicing is used to separate GaN-based semiconductor elements, then dicing can be performed successfully, but debris is generated and dicing time increases leading to higher costs
Solution Approach 1:
The patent applies preliminary action by forming groove-shaped dicing regions before the actual dicing process. These grooves are created by removing the dielectric film in partition regions, preparing the structure in advance to facilitate easier and cleaner separation during dicing, thereby reducing debris generation and processing time
2Ease of manufacture
If laser dicing is used to separate GaN-based semiconductor elements, then dicing can be performed successfully, but costs increase due to debris removal requirements
Solution Approach 1:
The patent applies the extraction principle by removing the dielectric film specifically in the partition regions to create groove-shaped dicing regions. This extracts the problematic dielectric material from areas where it would interfere with dicing, allowing for cleaner separation and reducing debris generation during the cutting process
3Reliability
If dry etching is used to etch the GaN film before dicing, then cracks can be reduced, but etching speed is slow decreasing productivity
Solution Approach 1:
The patent applies local quality by selectively removing the dielectric film only in the partition regions where dicing grooves are needed, rather than etching the entire GaN film surface. This localized approach reduces cracks in critical areas while maintaining high productivity by avoiding slow full-surface dry etching
4Device complexity
If blade dicing is used on GaN-based semiconductor wafers, then dicing can be performed with simple equipment, but cracks occur near the interface between substrate and GaN film
Solution Approach 1:
The patent applies preliminary action by pre-forming groove-shaped dicing regions through selective dielectric film removal before performing blade dicing. This preparation creates favorable conditions for the simple blade dicing process, guiding the cut along predetermined paths that avoid stress concentration points and prevent crack formation at the substrate-GaN interface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces interlayer cracks and surface chipping during dicing, improving yield and productivity while avoiding the costs associated with laser dicing and the slow etching speeds of dry etching.
Implementation Method 1
a dicing region forming step of forming groove-shaped dicing regions by removing the dielectric film in partition regions that partition the plurality of semiconductor elements
Data Source
AI summary
A production method for a semiconductor element (10) includes: a semiconductor element forming step of forming the semiconductor element (10) including a dielectric film (3); a dicing region forming step of forming dicing regions (11) by removing the dielectric film (3) in partition regions that partition the semiconductor element (10); and a dicing step of dicing the dicing regions (11).