GaN Dicing Street Stop Islands to Block Film Splitting
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Solution Overview
Problem
GaN thin films in semiconductor devices tend to split during the dicing process due to stress, which can lead to peeling and malfunction of the transistors, and existing stress relaxation layers and stoppers are ineffective in preventing this split.
Innovation Solution
The implementation of stop islands made of SiN film at the intersections of dicing streets, with specific dimensions to prevent the propagation of splits in the GaN thin film, ensuring the film remains adhered to the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional manufacturing processes are used for high-aspect-ratio structures, then existing process compatibility is maintained, but particle contamination and planarity issues occur
Solution Approach 1:
The copper seed layer is deposited beforehand using a technique compatible with existing manufacturing processes, such as chemical vapor deposition or atomic layer deposition. This preliminary action prevents particle contamination during the main electroplating step while maintaining compatibility with conventional fabrication sequences
Solution Approach 2:
The patent replaces the direct electroplating approach (which causes particle precipitation) with a two-step process where a copper seed layer is first deposited using vapor-phase techniques, then electroplating is performed on this smooth base, eliminating mechanical particle contamination issues
2Ease of operation
If copper plugs are formed in high-aspect-ratio holes, then via-hole connections are achieved, but aspect ratio causes particle precipitation and dishing
Solution Approach 1:
A copper seed layer is formed on the inner wall of the high-aspect-ratio via-hole before filling with copper plugs. This preliminary layer provides a uniform surface that prevents particle precipitation and dishing during electroplating, maintaining both via-hole connectivity and surface planarity
Solution Approach 2:
The patent addresses the high-aspect-ratio challenge by adding a dimensional layer (the copper seed layer coating the inner wall) that transforms the problem from a vertical filling challenge to a surface deposition problem, enabling uniform coverage and preventing precipitation issues
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents peeling of protective films from reaching element regions and effectively stops the propagation of splits in the dicing streets, maintaining the integrity and functionality of the semiconductor devices.
Implementation Method 1
a copper seed layer is formed on an inner wall of the via-hole
Implementation Method 2
copper plugs are formed by electroplating in a copper-containing solution
Data Source
Figure 1
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Figure 4
AI summary
A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si > X_ds and Y_si < Y_ds are satisfied.