GaN Diode Circuit with Parallel Impedance for DC-DC Converter
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Solution Overview
Problem
GaN-based diodes exhibit high leakage current under reverse bias and increased on-resistance in lateral structures, leading to higher forward voltage and power loss in DC to DC converters.
Innovation Solution
A diode circuit is designed with a gallium nitride-based semiconductor switching element and a parallel-connected impedance element, allowing current to flow through the element with lower impedance during forward bias, reducing on-resistance and power loss, and ensuring reliable turn-off of the GaN-HEMT during reverse bias to minimize leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a GaN-Di is formed as a lateral structure, then it is possible to manufacture the device, but the on-resistance generally increases leading to higher forward voltage and power loss
Solution Approach 1:
The patent combines the GaN-Di with a SiC-Di in a parallel configuration to form a hybrid diode circuit. This merging allows the circuit to leverage the low on-resistance of SiC-Di during forward bias while maintaining the manufacturability of lateral GaN-Di structure, thereby reducing power loss without sacrificing ease of manufacture.
Solution Approach 2:
The invention uses a composite structure combining GaN and SiC semiconductor materials in a single diode circuit. The GaN-Di provides high breakdown voltage capability while the SiC-Di provides low on-resistance, creating a composite device that achieves both low power loss and high voltage tolerance.
2Strength
If a GaN-Di is used in DC to DC converter, then high breakdown voltage is achieved, but leakage current during reverse bias becomes larger than GaN-HEMT
Solution Approach 1:
The patent merges GaN-Di and SiC-Di in parallel to create a hybrid diode circuit that leverages the complementary strengths of both materials. The SiC-Di component specifically addresses the high leakage current issue of GaN-Di during reverse bias, while the GaN-Di maintains the high breakdown voltage capability.
Solution Approach 2:
The invention changes the material parameter composition of the diode circuit by introducing SiC material alongside GaN. This parameter change in material composition allows the circuit to achieve lower leakage current during reverse bias while maintaining high breakdown voltage through the combined characteristics of both semiconductor materials.
Data Source
AI summary
A diode circuit includes a switching element having a first terminal and a second terminal. The switching element includes a control electrode for controlling electrical conductance between the first and second terminals. A diode has a cathode electrode connected to the first terminal of the switching element and an anode electrode connected to the control electrode of the switching element. An impedance element is connected in parallel to the diode. The switching element and the diode each comprise a gallium nitride-based semiconductor component. The switching element and the diode may optionally be disposed on the same semiconductor substrate. The diode circuit may optionally be included in a direct current to direct current converter device or other devices.