GaN Epitaxial Doping Reduction Using Sacrificial Layer Etching
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Solution Overview
Problem
In semiconductor manufacturing, doping elements like iron and magnesium in GaN-based epitaxial layers migrate upward, reducing electron mobility and device performance due to their memory effect.
Innovation Solution
A method involving forming a sacrificial layer above a doped epitaxial structure, etching it, and repeating this process until the doping element concentration is below a threshold, followed by growing an insertion layer to prevent upward migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the sacrificial layer etching process is repeated multiple times to reduce doping element concentration below threshold, then the purity of the upper epitaxial structure is improved, but the manufacturing complexity and process time increase
Solution Approach 1:
The patent applies periodic action by repeating the cycle of forming and etching sacrificial layers N times. Each cycle reduces the doping element concentration further, and the process is repeated until the concentration falls below the predetermined threshold, achieving progressive purification.
Solution Approach 2:
The patent changes the parameter of doping element concentration by controlling the number of etching cycles. By adjusting N (the number of repetitions), the process achieves different levels of concentration reduction, allowing precise control over the final purity level to meet specific thresholds.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents doping elements from migrating into upper structures, maintaining electron mobility and enhancing device performance by reducing their concentration to a predetermined level.
Implementation Method 1
S3: etching the sacrificial layer
Implementation Method 2
growing an insertion layer above the first epitaxial structure when the etching of the sacrificial layer is completed
Data Source
AI summary
The present application provides a method of manufacturing a semiconductor structure. The manufacturing method includes following steps: at step S1: forming a first epitaxial structure above a substrate, where the first epitaxial structure is doped with a doping element; at step S2: forming a sacrificial layer above the first epitaxial structure; at step S3: etching the sacrificial layer; at step S4: growing an insertion layer above the first epitaxial structure when the etching of the sacrificial layer is completed; and at step S5: growing a second epitaxial structure above the insertion layer; before proceeding to step S4, repeating step S2 and step S3, until a concentration of the doping element in the first epitaxial structure is lower than a predetermined threshold.