GaN Circuit Test Terminal Segmentation for High- and Low-Voltage Defects

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Solution Overview

Problem

Existing GaN-based integrated circuits face challenges in detecting defects within both high-voltage and low-voltage circuits due to the complexity of hybrid integration, which can lead to increased costs, parasitic inductance, and reduced reliability.

Innovation Solution

The integration of isolated test terminals connected to both high-voltage and low-voltage circuits allows for the independent application of test signals, enabling the detection of defects such as epitaxial, surface, and gate defects within the GaN-based integrated circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If hybrid integration of high-voltage and low-voltage circuits is implemented, then functionality and power handling capability are improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
ImprovefunctionalityVSAvoiddevice complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent divides the integrated circuit into separate high-voltage circuit regions and low-voltage circuit regions with distinct test terminals. This segmentation allows independent testing of each circuit type while maintaining their integrated functionality, thereby reducing the complexity of testing and manufacturing without sacrificing the versatility of the hybrid integrated circuit.

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If hybrid integration of high-voltage and low-voltage circuits is implemented, then functionality and power handling capability are improved, but parasitic inductance increases

Engineering Contradiction:
ImprovefunctionalityVSAvoidparasitic inductance
Core Design Contradiction:
Adaptability or versatilityVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the testing function into separate dedicated test terminals for high-voltage and low-voltage circuits. By providing isolated access points, the testing signals can be applied independently without coupling through shared pathways, thereby minimizing parasitic inductance while maintaining the functional integration of the circuit.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If high-voltage testing is performed on integrated circuits, then high-voltage circuit performance is verified, but low-voltage circuits may be damaged

Engineering Contradiction:
ImprovereliabilityVSAvoidcircuit damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent establishes isolated test terminals for low-voltage circuits before performing high-voltage testing. This preliminary configuration of separate testing pathways ensures that when high-voltage tests are conducted, the low-voltage circuits remain electrically isolated and protected from damage, while still allowing comprehensive reliability verification of the entire integrated circuit.

Inventive Principle:
Principle #10Preliminary action

4Reliability

If separate testing of high-voltage and low-voltage circuits is performed, then circuit reliability is improved, but testing time and complexity increase

Engineering Contradiction:
Improvecircuit reliabilityVSAvoidtesting time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent merges the testing capability into a single integrated circuit structure with dedicated test terminals for both high-voltage and low-voltage circuits. This allows simultaneous or sequential testing of both circuit types without requiring separate physical devices or complex external modifications, thereby maintaining high reliability through separate testing while reducing overall testing time and procedural complexity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12216152B2Gallium nitride-based devices and methods of testing thereof
Publication Date: 2025.02.04 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12216152B2 patent drawing
  • US12216152B2 patent drawing
  • US12216152B2 patent drawing

AI summary

An integrated circuit includes a first circuit, formed based on one or more Group III-V compound materials, that is configured to operate with a first voltage range. The integrated circuit includes a second circuit, also formed based on the one or more Group III-V compound materials, that is operatively coupled to the first circuit and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range. The integrated circuit includes a set of first test terminals connected to the first circuit. The integrated circuit includes a set of second test terminals connected to the second circuit. Test signals applied to the set of first test terminals and to the set of second test terminals, respectively, are independent from each other.