GaN FET Boost Converter Monolithic Integration for High Frequency
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Solution Overview
Problem
Conventional boost converters and current pulse generators face limitations in size reduction and pulse frequency due to the need for separate semiconductor dies for power transistors and gate drivers, and the switching speed limitations of silicon-based transistors, which restricts the miniaturization and high-frequency operation required for applications like lidar systems.
Innovation Solution
The integration of gallium nitride (GaN) FET transistor switches with monolithic gate drivers on a single semiconductor die, enabling higher switching speeds and reduced area for the boost converter circuit, allowing for increased pulse frequency and smaller form factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional vertical power MOSFETs are used in boost converters, then the circuit can be implemented with discrete components, but the device area increases and pulse frequency is limited due to separate semiconductor dies requirement
Solution Approach 1:
The patent merges the power transistor and gate driver onto a single semiconductor die, eliminating the need for separate dies and interconnect structures. This integration directly reduces device area while enabling higher pulse frequencies through shorter signal paths and reduced parasitic inductance between the gate driver and power transistor.
2Speed
If silicon-based transistors are used for switching, then the circuit can operate reliably, but the switching speed is limited which restricts pulse frequency
Solution Approach 1:
The patent changes the material parameter from silicon-based to gallium nitride (GaN) based transistors. This material substitution enables significantly higher switching speeds while maintaining operational reliability through GaN's superior breakdown voltage characteristics and higher electron saturation velocity, allowing the circuit to achieve higher pulse frequencies.
3Use of energy by moving object
If the capacitor is charged to higher voltage to generate high energy pulses, then the energy output increases, but the boost converter size and complexity increase
Solution Approach 1:
The integration of power and signal components on a single die simplifies the overall converter architecture by eliminating external interconnects and reducing the number of discrete components required. This merging approach enables high voltage operation with reduced complexity compared to conventional discrete implementations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables higher pulsing frequencies and a smaller form factor for current pulse generators, improving the performance and compactness of systems like lidar by leveraging the high switching speeds and voltage handling capabilities of GaN FETs, while integrating power and signal components on a single die.
Implementation Method 1
the circuit, termed a boost converter, includes an inductor to store energy from the lower voltage power supply and transfers this energy to the capacitor
Implementation Method 2
The integration of gallium nitride (GaN) FET transistor switches with monolithic gate drivers on a single semiconductor die, enabling higher switching speeds and reduced area for the boost converter circuit
Data Source
Figure 1A~1B
Figure 2
Figure 3
AI summary
A current pulse generator circuit configured to be monolithically integrated into a single semiconductor die and provide high pulsing frequencies. A first GaN FET transistor controls the charging of a capacitor in a boost converter. A second GaN FET transistor controls the discharging of the capacitor through a load, such as a laser diode, connected to the boost converter. Both GaN FET transistors are preferably enhancement mode GaN FETs and may be integrated into the single semiconductor die, together with gate drivers. The diode in a conventional boost converter circuit can also be implemented in the present invention as a GaN FET transistor, and also integrated into the single semiconductor die.