GaN FET Recessed Source Drain Impurity Profile
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Solution Overview
Problem
AlGaN/GaN Field Effect Transistors (FETs) face challenges in reducing on-resistance due to high contact resistance and channel resistance, which hinders high-efficiency switching operations.
Innovation Solution
The implementation of a compound semiconductor device with recessed portions in the electron supply layer, where the concentration of impurities under the source and drain electrodes is higher than near the gate electrode, and a chemical compound semiconductor layer buries these recessed portions, reducing contact resistance and improving ohmic properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If Al composition of the AlGaN layer is increased to decrease channel resistance, then channel resistance decreases, but high efficiency operation becomes difficult
Solution Approach 1:
The patent achieves high efficiency operation by implementing local quality that optimizes both channel transport and contact properties. The high Al composition in the electron supply layer ensures high electron concentration for low channel resistance, while the low Al composition beneath electrodes ensures low contact resistance, together enabling high efficiency device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the on-resistance of the AlGaN/GaN FET, enabling high-efficiency operation with improved reliability for high voltage and power applications.
Implementation Method 1
a concentration of impurities included below the source electrode and the drain electrode is higher than a concentration of impurities included near the gate electrode
Data Source
AI summary
A compound semiconductor device includes an electron transit layer; an electron supply layer formed over the electron transit layer; a first recessed portion and a second recessed portion formed in the electron supply layer; a chemical compound semiconductor layer including impurities that buries the first recessed portion and the second recessed portion and covers over the electron supply layer; a source electrode formed over the chemical compound semiconductor layer which buries the first recessed portion; a drain electrode formed over the chemical compound semiconductor layer which buries the second recessed portion; and a gate electrode formed over the electron supply layer between the source electrode and the drain electrode, wherein, in the chemical compound semiconductor layer, a concentration of impurities included below the source electrode and the drain electrode is higher than a concentration of impurities included near the gate electrode.