GaN Field Plate Structure for Electric Field Modulation
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Solution Overview
Problem
Semiconductor devices with traditional field plate structures suffer from poor reliability and high leakage current due to non-uniform electric field distribution, leading to avalanche breakdown, which limits their application and reliability.
Innovation Solution
A semiconductor device with a field plate structure that includes a main body portion and a first extension portion, where the first extension portion is connected to the main body and extends towards the gate, partially overlapping it, to modulate the electric field and reduce electric field accumulation near the drain, thereby increasing the breakdown voltage and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a traditional field plate structure is used to improve breakdown voltage, then output power increases, but reliability deteriorates due to non-uniform electric field distribution and edge effects
Solution Approach 1:
The field plate structure is segmented into multiple parts: a first field plate portion extending from the gate toward the drain, a second field plate portion extending from the gate toward the source, and a third field plate portion connecting the first and second portions. This segmentation allows each portion to independently modulate electric fields in different regions, creating multiple depletion regions that distribute electric field lines more uniformly and prevent concentration at gate edges, thereby improving reliability while maintaining power output.
Solution Approach 2:
Different portions of the field plate structure are positioned to address local electric field issues: the first field plate portion specifically addresses the drain-side gate edge where high electric field concentration occurs, the second portion addresses the source-side, and the third portion provides overall field modulation. This localized approach ensures that each region with problematic electric field distribution receives targeted field modulation, improving overall device reliability.
2Reliability
If a field plate structure is added to improve breakdown voltage, then device performance improves, but device complexity increases
Solution Approach 1:
The first, second, and third field plate portions are electrically connected to form an integrated field plate structure, all tied to the gate potential. This merging allows the multiple portions to work together as a unified system for electric field modulation, achieving complex field distribution control while maintaining a relatively simple electrical connection scheme, thus balancing performance improvement with structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modified field plate structure effectively reduces electric field accumulation and leakage current, enhancing the reliability and breakdown voltage of semiconductor devices by creating additional depletion regions and improving the stability of the device under high temperature conditions.
Implementation Method 1
a distribution of electric field lines in a depletion region of a barrier layer is not uniform, and an edge of a side of a gate near a drain tends to collect most of the electric field lines
Implementation Method 2
Due to the strong two-dimensional electron gas in the AlGaN/GaN heterostructure
Data Source
AI summary
Disclosed are a semiconductor device and a preparation method thereof. The semiconductor device includes a substrate; a multilayer semiconductor layer located on a side of the substrate; and a source, a gate, a drain and a field plate structure located on a side, away from the substrate, of the multilayer semiconductor layer. The field plate structure includes a main body portion and a first extension portion; the main body portion is located between the gate and the drain; the first extension portion is connected to the main body portion and is located on a side, away from the multilayer semiconductor layer, of the gate; and the first extension portion at least partially overlaps the gate. By adopting the above technical solution, the probability of the breakdown, which occurs at the side of the gate near the drain, may be reduced, thereby increasing the reliability of semiconductor devices.