GaN Nitride Semiconductor Device Field Plate Optimization
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Solution Overview
Problem
Semiconductor devices face a trade-off between breakdown voltage and on-resistance, and existing materials like silicon have limitations in improving switching efficiency, particularly in transistor applications where low on-resistance and high breakdown voltage are required.
Innovation Solution
The semiconductor device employs a GaN-based nitride semiconductor structure with multiple field plate electrodes and specific layer configurations to reduce gate-to-drain capacitance and electric field concentration, enhancing switching efficiency by optimizing the relationship between the nitride semiconductor layers and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon is used as the element material, then manufacturing cost and ease of manufacture are maintained, but breakdown voltage and on-resistance cannot be significantly improved beyond current limits
Solution Approach 1:
The patent employs a composite structure combining silicon substrate with nitride semiconductor layers (AlGaN barrier layer and GaN channel layer). This composite material approach allows leveraging the mature silicon manufacturing infrastructure while incorporating nitride semiconductor properties for higher breakdown voltage and lower on-resistance, thus resolving the contradiction between manufacturing ease and performance improvement
Solution Approach 2:
The patent changes the material parameters by introducing nitride semiconductor layers with specific bandgap characteristics and electron mobility properties. The AlGaN barrier layer with higher aluminum composition ratio provides higher breakdown voltage, while the GaN channel layer provides high electron mobility for low on-resistance, achieving performance improvements without fundamentally changing the manufacturing process
2Reliability
If nitride semiconductor is used to improve breakdown voltage and reduce on-resistance, then switching efficiency is improved, but gate-to-drain capacitance increases
Solution Approach 1:
The patent applies local quality by creating a non-uniform aluminum composition distribution in the AlGaN barrier layer. The barrier layer has a higher aluminum composition ratio near the AlN template layer interface and a lower ratio toward the GaN channel layer interface. This gradual composition gradient locally optimizes the electric field distribution, reducing peak electric field concentration at the heterostructure interface while maintaining high breakdown voltage, thus reducing gate-to-drain capacitance
Data Source
AI summary
A semiconductor device of an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer placed on the first nitride semiconductor layer; a first electrode placed on the second nitride semiconductor layer; a second electrode placed on the first nitride semiconductor layer; a gate electrode placed between the first electrode and the second electrode; a first field plate electrode placed on the second nitride semiconductor layer, the first field plate electrode having the same height as the gate electrode; and a second field plate electrode provided on an upper side of the first field plate electrode, the second field plate electrode being placed on a side of the second electrode compared to the first field plate electrode.