Gallium Nitride Film Sputtering for Low-Temperature Deposition
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Solution Overview
Problem
Existing methods for depositing gallium nitride films at low temperatures fail to produce films of sufficient quality for micro LED display devices.
Innovation Solution
A method involving a sputtering process where a substrate is placed in a vacuum chamber with a target containing nitrogen and gallium, using a sputtering gas to generate plasma, and applying a voltage to create gallium ions that react with nitrogen anions generated by nitrogen radicals to form gallium nitride on the substrate, even at low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If gallium nitride film is deposited by sputtering at low temperature, then deposition temperature is reduced, but film quality is insufficient
Solution Approach 1:
The patent introduces a two-stage sputtering process with controlled voltage application. In the first stage, voltage is applied to generate plasma and gallium ions. In the second stage, voltage is stopped to allow gallium ions to react with nitrogen anions and form high-quality gallium nitride film. This temporal parameter change enables low-temperature deposition while maintaining film quality.
Solution Approach 2:
The patent employs periodic application and cessation of voltage during the sputtering process. The voltage is applied intermittently rather than continuously, creating distinct phases of plasma generation and film formation. This periodic action allows the system to achieve both low temperature operation and high film quality by separating the ionization phase from the deposition phase.
2Use of energy by moving object
If voltage is continuously applied to target during sputtering, then plasma generation is maintained, but gallium nitride film formation is inhibited
Solution Approach 1:
The patent utilizes periodic voltage application where plasma generation and film formation are separated into distinct time phases. During voltage application, plasma is generated; during voltage cessation, gallium ions react with nitrogen anions to form the film. This periodic modulation resolves the contradiction between maintaining plasma and enabling film formation.
Solution Approach 2:
The patent performs preliminary plasma generation and gallium ion creation before the actual film formation step. By pre-generating the necessary reactive species through voltage application, then stopping voltage to allow reaction, the system prepares all components needed for high-quality film formation without continuous energy input that would prevent deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the deposition of high-quality gallium nitride films on substrates like glass, suitable for micro LED devices, by leveraging nitrogen radicals and metastable sputtering gas states to enhance film quality without high-temperature processing.
Implementation Method 1
generating a plasma of the sputtering gas by application of a voltage to the target
Implementation Method 2
generating a gallium ion by a collision of an ion of the sputtering gas with the target
Implementation Method 3
The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical
Implementation Method 4
The gallium nitride is generated by a reaction of the gallium ion with a nitride anion which is generated by a reaction of a nitrogen atom generated using a sputtering gas in a metastable state in the vacuum chamber with an electron in the vacuum chamber
Implementation Method 5
stopping the application of the voltage to the target and depositing gallium nitride on the substrate
Data Source
AI summary
A method for manufacturing a gallium nitride film includes the steps of placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber, supplying a sputtering gas into the vacuum chamber, supplying a nitrogen radical into the vacuum chamber, generating a plasma of the sputtering gas by application of a voltage to the target, generating a gallium ion by a collision of an ion of the sputtering gas with the target, and stopping the application of the voltage to the target and depositing gallium nitride on the substrate. The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.