GaN Vertical Fin FET Gate Regrowth Layout for Uniform Channels

The fin array is divided into multiple rows and columns with specific spacing relationships. The fins are segmented into first rows and second rows separated by a space, with each row containing fins at different positions. This segmentation allows the regrowth process to achieve uniformity across the entire array by treating different regions with appropriate spacing relationships, rather than attempting to regrow all fins simultaneously as a single unit.

Different regions of the fin array are designed with different local characteristics. The first row and second row of fins are separated by a specific space, and fins within each row have different positions relative to each other. This local variation in spacing and arrangement creates optimal conditions for uniform regrowth across different areas of the array, addressing the non-uniformity problem by tailoring the local structure to facilitate consistent epitaxial growth.

The dense fin array is segmented into multiple rows with spaces between them. The first row and second row are separated by a defined space, and each row contains fins at specific positions. This segmentation reduces the density within each local region while maintaining high overall device capacity through the extended array. The reduced local density allows the regrowth process to achieve uniform gate thickness and channel lengths across all fins.

The fin array is organized in a two-dimensional arrangement with rows and columns, where the second row is positioned at a different location relative to the first row. This dimensional organization creates a pattern where fins are distributed across multiple spatial dimensions rather than being densely packed in a single plane. The spatial distribution across rows and columns with defined spacing relationships enables uniform regrowth while maintaining high device capacity through the extended two-dimensional array structure.