GaN Semiconductor Gate Electrode Shrink Agent Film
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Solution Overview
Problem
Conventional methods for manufacturing semiconductor devices, such as GaN-HEMTs, often result in inconsistent characteristics due to corrosion of the Ni film in the gate electrode, which is caused by the reaction between the electron beam resist and the Ni film.
Innovation Solution
A method involving the formation of a film of a shrink agent on the sidewall surface of the electron beam resist before depositing the Ni film, which suppresses the reaction between the resist and the Ni film, ensuring consistent characteristics by preventing corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an electron beam resist is used to form the gate electrode, then the manufacturing process is simplified, but the Ni film corrodes due to reaction between the resist and Ni film
Solution Approach 1:
A shrink agent film is introduced as an intermediary layer between the electron beam resist and the Ni film. This mediator prevents direct contact and chemical reaction between the chlorine-containing resist and the Ni film, thereby eliminating corrosion while maintaining the manufacturing simplicity of using electron beam resist.
Solution Approach 2:
The shrink agent film is formed on the sidewall surface of the resist pattern before the Ni film deposition. This preliminary protective action ensures that when the Ni film is subsequently deposited, it cannot directly contact the electron beam resist, thus preventing corrosion from occurring in the first place.
2Productivity
If the Ni film is deposited directly on the electron beam resist, then the manufacturing steps are reduced, but the device characteristics become inconsistent
Solution Approach 1:
The shrink agent film serves as a protective intermediary that prevents the electron beam resist from corroding the Ni film. This additional thin film layer ensures consistent device characteristics by eliminating the harmful chemical interaction, while the overall process remains efficient with only one more deposition step.
3Reliability
If a protective film is formed to prevent Ni film corrosion, then the Ni film durability is improved, but the device complexity increases
Solution Approach 1:
A thin film of shrink agent is applied specifically on the sidewall surface of the resist pattern. This thin protective film provides adequate corrosion protection without adding significant structural complexity or volume to the device, maintaining simplicity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the suppression of variations in semiconductor device characteristics by preventing Ni film corrosion, resulting in consistent and reliable performance.
Implementation Method 1
corrosion of the Ni film, which is caused by the reaction between the electron beam resist and the Ni film
Implementation Method 2
forming a film of a shrink agent that covers a sidewall surface of the first opening
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming, on or above a GaN-based semiconductor layer, an electron beam resist containing chlorine; forming, in the electron beam resist, a first opening that exposes a portion of a surface of the semiconductor layer; forming a film of a shrink agent that covers a sidewall surface of the first opening; and forming, in a state in which the sidewall surface is covered by the film of the shrink agent, a Ni film that contacts the semiconductor layer through the first opening.