GaN HEMT Channel Structure With 2D Material for Higher Electron Mobility
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Solution Overview
Problem
Conventional high electron mobility transistors (HEMTs) face limitations in electron mobility due to the GaN material used, affecting their electrical characteristics.
Innovation Solution
A high electron mobility transistor design incorporating a substrate, buffer layer, gallium nitride layer, two-dimensional material structure, drain, source, and gate, where the two-dimensional material structure includes connection parts and an extension part with a gradient structure, and a covering layer made of aluminum gallium nitride, enhancing electron mobility and device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional GaN material is used in HEMT channel layer, then the device structure is simple and easy to manufacture, but electron mobility is limited and electrical characteristics are affected
Solution Approach 1:
The patent employs a composite material structure consisting of GaN channel layer combined with two-dimensional material (such as MoS2) layers. This composite structure integrates the high breakdown voltage and lattice matching advantages of GaN with the high electron mobility characteristics of two-dimensional materials, thereby improving overall device performance without excessive complexity increase
Solution Approach 2:
The patent modifies the channel layer parameters by introducing two-dimensional material layers with specific thicknesses (extension part thickness of 1-10 nm, connection part thickness) and material compositions. These parameter changes enable enhanced electron mobility while maintaining manufacturability through controlled deposition processes
2Reliability
If two-dimensional material structure is introduced to improve electron mobility, then electrical characteristics are enhanced, but device structure becomes more complex
Solution Approach 1:
The two-dimensional material structure is segmented into distinct functional parts: extension parts that directly contact the GaN channel layer for electron transport, and connection parts that connect to source/drain electrodes. This segmentation allows each part to be optimized for its specific function while simplifying the overall fabrication process
Solution Approach 2:
The patent applies different thicknesses and configurations of two-dimensional material layers at different locations: the extension part has a specific thickness range (1-10 nm) for optimal electron mobility, while the connection part has greater thickness for robust electrical contact. This local quality differentiation enhances performance without uniformly increasing complexity throughout the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively improves electron mobility and device characteristics by utilizing two-dimensional materials like MoS2, enabling superior electron transport and control through the adjustment of the gate's reverse bias, switching between ON and OFF states.
Implementation Method 1
The two-dimensional material structure is located on the channel layer... effectively improve the electron mobility of the channel layer by the characteristics of the two-dimensional material and improve the device characteristics
Implementation Method 2
the effect of turning on or off the control device can be achieved by adjusting the reverse bias applied to the gate
Implementation Method 3
By means of the polarization effect of AlGaN and GaN, a two-dimensional electron gas layer can be formed in the channel layer
Data Source
AI summary
The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a gallium nitride layer, a two-dimensional material structure, a covering layer, a drain, a source and a gate. The buffer layer is located on the substrate. The gallium nitride layer is located on the buffer layer and forms a channel layer. The two-dimensional material structure is located on the channel layer. The covering layer partially covers the two-dimensional material structure. The drain and the source are arranged on the two-dimensional material structure, and the gate is arranged on the covering layer.