GaN HEMT Structure With 3D Doped Contacts for Lower On-Resistance
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Solution Overview
Problem
GaN-based HEMT microelectronic devices exhibit relatively high on-resistance due to significant contact resistance between N-type ion heavily-doped layers and heterojunction interfaces.
Innovation Solution
Embedding parts of the source and drain N-type ion heavily-doped layers into the barrier and channel layers in the thickness direction to increase the collection area of two-dimensional electron gas, thereby reducing contact resistance and overall on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If N-type ion heavily-doped layers are used in source and drain regions, then electrical conductivity is improved, but contact resistance at heterojunction interfaces increases
Solution Approach 1:
The patent extends the N-type ion heavily-doped layers vertically into the barrier and channel layers, transforming a two-dimensional contact interface into a three-dimensional volumetric contact region. This dimensional extension increases the effective contact area and reduces contact resistance by providing multiple parallel conduction paths through the heterojunction interface.
Solution Approach 2:
The N-type ion heavily-doped layers are formed in advance within the source and drain regions before final device operation. This preliminary doping action ensures that high-conductivity regions are pre-established at the interfaces with the heterojunction, reducing contact resistance before current flow begins.
2Object-affected harmful factors
If contact area between N-type ion heavily-doped layers and heterojunction interface is increased, then contact resistance is reduced, but device structure complexity increases
Solution Approach 1:
The patent merges the N-type ion heavily-doped layers with the existing source and drain region structures, extending them vertically into the barrier and channel layers. This merging approach increases contact area without requiring separate additional components or complex assembly steps, thereby reducing structure complexity while still achieving lower contact resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively reduces contact resistance and on-resistance by increasing the contact area between the N-type ion heavily-doped layers and the heterojunction interface, enhancing the frequency and power performance of GaN-based HEMT devices.
Implementation Method 1
a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region
Implementation Method 2
increase the collection area of two-dimensional electron gas, thereby reducing contact resistance
Data Source
AI summary
The present disclosure provides a GaN-based semiconductor structure, including: a substrate; a channel layer; a barrier layer, where the channel layer and the barrier layer each include a gate region, a source region and a drain region; a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region; a gate electrode located in the gate region; a source electrode located on the source region N-type ion heavily-doped layer; and a drain electrode located on the drain region N-type ion heavily-doped layer.