GaN HEMT Electrode Formation Reducing Process Steps
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Solution Overview
Problem
The manufacturing process of semiconductor devices, such as gallium nitride-based High Electron Mobility Transistors, requires multiple process steps due to the separate formation of field plate, source, and drain electrodes, leading to increased costs and complexity.
Innovation Solution
A semiconductor device design where the gate field plate electrode is formed simultaneously with the source and drain electrodes using a material identical to theirs, reducing the number of process steps and incorporating a high melting point metal or its nitride for the gate electrode to prevent material diffusion into the insulating film, thus maintaining electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the field plate electrode, source electrode, and drain electrode are formed by different processes, then the electrical properties and material requirements are satisfied, but the number of process steps increases and manufacturing cost increases
Solution Approach 1:
The patent combines the formation of the field plate electrode, source electrode, and drain electrode into a single simultaneous deposition process. All three electrodes are formed from a common electrode layer that is deposited in one step, then selectively connected to different potential terminals through subsequent connection processes. This merging eliminates multiple separate deposition processes while maintaining the distinct electrical functions of each electrode.
Solution Approach 2:
The patent segments the common electrode layer into distinct regions that will become the field plate electrode, source electrode, and drain electrode. By forming a continuous electrode layer and then selectively connecting portions to different terminals, the design achieves both unity in formation process and diversity in electrical function.
2Reliability
If multiple process steps are used to form different electrodes separately, then material-specific properties are optimized, but manufacturing cost and production time increase
Solution Approach 1:
The patent merges the deposition of all electrode materials into a single process step, forming the field plate electrode, source electrode, and drain electrode simultaneously from one continuous electrode layer. This dramatically improves manufacturing efficiency and productivity while the subsequent selective connection processes ensure that each electrode region maintains its required electrical properties.
Solution Approach 2:
The common electrode layer serves multiple functions: it forms the field plate electrode region, source electrode region, and drain electrode region all in one deposition process. This universal electrode layer approach eliminates the need for separate deposition processes for each electrode type.
3Stability of the object's composition
If a high melting point metal or nitride is used for the gate electrode, then material diffusion into the insulating film is prevented, but process compatibility and material selection become more restricted
Solution Approach 1:
The patent changes the material parameter of the gate electrode to high melting point materials such as tungsten, molybdenum, or their nitrides. This parameter change prevents diffusion into the insulating film at typical processing temperatures, maintaining film integrity. The solution accepts the trade-off of more restricted material selection in exchange for improved thermal stability and diffusion resistance.
Data Source
AI summary
A semiconductor device includes a semiconductor region, a first electrode provided on the semiconductor region, a second electrode provided on the semiconductor region adjacent to and spaced from a side of the first electrode, and containing an identical material as the material of the first electrode, a third electrode provided on the semiconductor region in a location between the first electrode and the second electrode, a first insulating film provided between the semiconductor region and the third electrode, and a fourth electrode connected to the third electrode containing the same material as the material of the first electrode and the second electrode.