GaN HEMT Field Plate Structure for Breakdown Voltage Control
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Solution Overview
Problem
Current semiconductor technologies face challenges in achieving high breakdown voltage and reducing gate-to-drain capacitance in high electron mobility transistors (HEMTs) due to limitations in material band gaps and electric field distribution.
Innovation Solution
The implementation of a semiconductor device structure involving a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) barrier layer, with a gate field plate positioned between the gate and drain structures, which modulates the electric field and reduces peak electric field intensity, thereby enhancing breakdown voltage and minimizing gate-to-drain capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor materials and structures are used, then device complexity is limited, but breakdown voltage and gate-to-drain capacitance performance cannot be sufficiently improved
Solution Approach 1:
The patent employs composite material structures including GaN layers, AlGaN barrier layers, and multiple dielectric layers with different properties to achieve high breakdown voltage. The combination of wide band gap materials (GaN, AlGaN) with specific dielectric materials creates a composite structure that simultaneously improves reliability and manages device complexity through material property optimization.
Solution Approach 2:
The patent introduces a gate field plate extending in the drain direction beyond the gate structure, adding a spatial dimension to the electric field modulation. This dimensional extension allows the field plate to modulate electric fields in regions previously inaccessible, improving breakdown voltage without proportionally increasing overall device complexity.
2Reliability
If conventional gate structures are used, then device complexity is reduced, but gate-to-drain capacitance cannot be sufficiently minimized
Solution Approach 1:
The gate field plate serves as an intermediary element between the gate structure and the drain region. It modulates electric fields in the space between gate and drain, reducing peak electric field intensity and thereby minimizing gate-to-drain capacitance. This intermediary structure achieves capacitance reduction while maintaining manageable device complexity through targeted electric field control.
Solution Approach 2:
The patent modifies electric field distribution parameters by introducing the gate field plate, which changes the spatial parameters of electric field intensity. The field plate alters the electric field profile in the drain direction, reducing peak values and minimizing capacitance without requiring complete redesign of the entire gate structure.
3Reliability
If simple dielectric layer structures are used, then manufacturing precision requirements are reduced, but electric field modulation capability is insufficient
Solution Approach 1:
The patent applies local quality by using different dielectric materials with specific properties in different regions. The first dielectric layer has different characteristics from the second dielectric layer, allowing optimized electric field modulation in specific regions. This localized material differentiation improves electric field control while managing manufacturing precision through region-specific optimization rather than uniform complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the breakdown voltage and reduces gate-to-drain capacitance, leading to more efficient and reliable high electron mobility transistor performance.
Implementation Method 1
an aluminum gallium nitride (AlGaN) barrier layer, with a gate field plate positioned between the gate and drain structures, which modulates the electric field and reduces peak electric field intensity
Implementation Method 2
gallium nitride (GaN) as the third generation of wide band gap semiconductor material, has characteristics of large band gap, high breakdown voltage, the two-dimensional electron gas has large electron velocity at high concentrations
Data Source
AI summary
A device includes a first III-V compound layer, a second III-V compound layer, source and drain structures, a gate structure, and a gate field plate. The second III-V compound layer is over the first III-V compound layer. The source and drain structures are over the second III-V compound layer and spaced apart from each other. The gate structure is over the second III-V compound layer and between the source and drain structures. The gate field plate is over the second III-V compound. From a top view the gate field plate forms a strip pattern interposing a stripe pattern of the gate structure and a stripe pattern of the drain structure.