GaN HEMT Surge Protection via Integrated Electrode Configuration
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Solution Overview
Problem
Gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) lack a body diode, making them susceptible to breakdown under high surge voltages, requiring external surge protectors that increase temperature, reduce efficiency, and consume more power due to parasitic capacitance and flow-through currents.
Innovation Solution
A semiconductor device with a transistor region and a surge-protector region, where the surge-protector region has electrodes connected in a specific configuration to divert current before it reaches the transistor, reducing the distance between surge-protector electrodes to prioritize current flow through the surge-protector region over the transistor region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a surge protector is added to protect GaN-base HEMT from high surge voltage, then surge resistance is improved, but device complexity increases and parasitic capacity is generated
Solution Approach 1:
The invention merges the surge protector function with the HEMT structure by forming the surge-protector region within the same semiconductor device. The surge-protector first electrode, second electrode, and third electrode are integrated into the device architecture, allowing the HEMT to protect itself from surge voltages without requiring external surge protector components.
Solution Approach 2:
The semiconductor device achieves multi-functionality by combining the transistor region (for normal operation) and the surge-protector region (for surge protection) into a single device. This allows the device to perform both switching operations and surge protection functions, eliminating the need for separate surge protector components.
2Reliability
If a surge protector is used for the switching element, then surge protection is provided, but operation efficiency decreases due to heat generation and temperature increase
Solution Approach 1:
The surge-protector region is merged with the transistor region within the same semiconductor device structure. Both regions share the same substrate and semiconductor layers, eliminating the need for separate surge protector components that would generate heat and reduce efficiency.
Solution Approach 2:
The HEMT protects itself from surge voltages through the integrated surge-protector region. The device uses its own internal structure to divert surge current, eliminating the need for external surge protectors that would cause heat generation and efficiency loss.
3Reliability
If a surge protector is provided, then surge resistance is improved, but power consumption increases due to flow-through current
Solution Approach 1:
The surge-protector region is integrated within the same semiconductor device, sharing the substrate and semiconductor layers with the transistor region. This integration eliminates the flow-through current issue that occurs with external surge protectors, as the surge protection is achieved through the device's own internal structure.
4Speed
If the operation speed of HEMT is higher than the operation speed of surge protector, then switching performance is improved, but the HEMT may be broken before current flows in the surge protector
Solution Approach 1:
The surge-protector region is formed within the same semiconductor device as the transistor region, sharing the same substrate and semiconductor layers. This integration ensures that both regions respond simultaneously to voltage changes, eliminating the timing delay that would occur with external surge protectors.
Solution Approach 2:
The surge-protector region is positioned and configured to respond to surge voltages before they can damage the transistor region. The electrode configuration and semiconductor layer structure are designed to divert surge current away from the transistor region, providing preliminary protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device effectively protects the HEMT from high surge voltages, maintaining operation efficiency and reliability by ensuring current flows through the surge-protector region first, preventing transistor breakdown and reducing power consumption.
Implementation Method 1
a difference in lattice constant between AlGaN and GaN causes a distortion, resulting in that piezoelectric polarization and spontaneous polarization occur in AlGaN, and high-density two-dimensional electron gas (2DEG) is generated
Implementation Method 2
a difference in lattice constant between AlGaN and GaN causes a distortion, resulting in that piezoelectric polarization and spontaneous polarization occur in AlGaN
Data Source
AI summary
A semiconductor device, that has a transistor region and a surge-protector region, includes: a substrate; a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; a gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer in the transistor region; and a surge-protector first electrode, a surge-protector second electrode, and a surge-protector third electrode formed on the second semiconductor layer in the surge-protector region, wherein the source electrode and the surge-protector second electrode are connected to each other, wherein the drain electrode and the surge-protector third electrode are connected to each other, wherein the surge-protector first electrode is formed between the surge-protector second electrode and the surge-protector third electrode, and wherein a distance between the surge-protector first electrode and the surge-protector third electrode is smaller than a distance between the gate electrode and the drain electrode.