GaN HEMT Multi-Function Power Control Circuit for Radiation Tolerance
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Solution Overview
Problem
Existing power conversion circuits for electronic devices face challenges in size efficiency and radiation tolerance, particularly when using silicon-based transistors, which limit their performance in switching mode operations and radiation-hardened environments.
Innovation Solution
A multi-function circuit utilizing only GaN enhancement mode HEMTs for both low and high-side driver topologies, eliminating silicon transistors and incorporating discrete GaN components for improved radiation tolerance and reduced size, with bootstrap circuits and bypass capacitors for efficient power management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon-based transistors are used in power conversion circuits, then the circuits can be manufactured with conventional processes, but the size efficiency and radiation tolerance are limited
Solution Approach 1:
The patent changes the fundamental material parameter from silicon to gallium nitride (GaN), which has superior radiation tolerance and higher electron mobility. This material substitution enables the circuit to achieve both improved radiation hardness and reduced size efficiency simultaneously, resolving the contradiction between reliability and device complexity
Solution Approach 2:
The patent employs GaN high electron mobility transistors (HEMTs) as the active semiconductor material, leveraging the composite structure of GaN heteroepitaxial layers. This composite material approach provides both the radiation tolerance required for space and military applications and the high power density needed for compact circuit design
2Productivity
If conventional power switching circuit topologies are used, then the circuits can convert high DC voltage to lower DC voltage, but the size and efficiency do not meet the needs of new electronic devices
Solution Approach 1:
The patent changes the switching device parameters by using GaN HEMTs instead of conventional silicon transistors. GaN devices offer higher switching frequencies and lower on-resistance, which directly improve power conversion efficiency while reducing the physical size of the power conversion circuit, thereby resolving the contradiction between productivity and weight
Solution Approach 2:
The patent creates a universal power control circuit design that can be applied to various electronic devices requiring high efficiency and compact size. The circuit topology using GaN HEMTs provides multi-functionality across different power conversion applications, achieving both improved efficiency and reduced size simultaneously
Data Source
AI summary
Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.