GaN HEMT with Integrated Schottky Barrier Diode

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Solution Overview

Problem

GaN-based high electron mobility transistors (HEMTs) lack a body diode, leading to operational delays and increased power consumption due to inverse electric current flow before the diode functions as a free wheel diode, and fail to operate as a protective circuit during overvoltage conditions.

Innovation Solution

A semiconductor device structure incorporating a Schottky junction anode electrode and an ohmic junction cathode electrode connected to the HEMT, with a Schottky barrier diode integrated in parallel to the HEMT, allowing the diode to operate as a free wheel and protective diode, reducing power consumption and preventing HEMT failure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a pn junction diode is connected to the GaN-based HEMT, then the HEMT can function as a high breakdown voltage power device, but the diode operation delays and inverse electric current flows in the HEMT before the diode operates

Engineering Contradiction:

Improvebreakdown voltage capabilityVSAvoiddiode operation delay

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent changes the diode structure from a pn junction diode to a Schottky barrier diode, altering the physical parameters of the junction. The Schottky barrier diode utilizes a metal-semiconductor junction with different electrical characteristics, enabling faster response time and eliminating the operation delay while maintaining the high breakdown voltage capability of the GaN-based HEMT

Inventive Principle:

Principle #35Parameter changes

2Reliability

If a pn junction diode is connected to the GaN-based HEMT, then the HEMT can operate as a high breakdown voltage power device, but power consumption increases due to inverse electric current flow

Engineering Contradiction:

Improvebreakdown voltage capabilityVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The Schottky barrier diode operates before significant current flows through the HEMT, suppressing power consumption and ensuring the HEMT's functionality as a protective circuit during voltage fluctuations.

Implementation Method 1

an anode electrode that forms a Schottky junction with the second electron transit layer

Methodology Applied

Scientific EffectSchottky junction:

Implementation Method 2

a cathode electrode that forms an ohmic junction with the second electron transit layer

Methodology Applied

Scientific EffectOhmic junction:

Data Source

PatentUS10453948B2Semiconductor device which comprises transistor and diode

Publication Date: 2019.10.22 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A transistor which includes an electron transit layer and an electron supply layer which are stacked in a thickness direction of a substrate; an electron transit layer formed over the substrate in parallel to the electron transit layer and the electron supply layer; an anode electrode which forms a Schottky junction with the electron transit layer; and a cathode electrode which forms an ohmic junction with the electron transit layer are provided. The anode electrode is connected to a source of the transistor, and the cathode electrode is connected to a drain of the transistor.