GaN HEMT Inhomogeneous Sheet Resistance for Field Spike Reduction
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Solution Overview
Problem
GaN-based HEMT components face rapid degradation due to high electrical fields and temperatures, particularly around the gate electrode, which affects their long-term stability and reliability.
Innovation Solution
Increasing the sheet resistance of the conduction channel inhomogeneously, specifically in the region between the gate and drain electrodes, by reducing the layer thickness of the second semiconductor layer or implanting foreign atoms, to reduce peak electrical fields and enhance stability without compromising output power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the sheet resistance of the conduction channel is increased in the region between gate and drain, then peak electrical fields are reduced and reliability is improved, but output power may be compromised
Solution Approach 1:
The patent applies local quality by creating an inhomogeneous sheet resistance distribution in the conduction channel, specifically increasing resistance in the region between gate and drain electrodes. This is achieved by reducing the layer thickness of the second semiconductor layer or implanting foreign atoms in this specific region, thereby locally reducing peak electrical fields without affecting the entire conduction channel uniformly, thus maintaining output power while improving reliability
Solution Approach 2:
The patent changes the sheet resistance parameter in a spatially selective manner. By modifying the layer thickness or introducing foreign atoms, the sheet resistance is increased in the critical region between gate and drain, which reduces peak electrical fields and improves reliability, while other regions maintain their original parameters to preserve output power
2Object-affected harmful factors
If the sheet resistance of the conduction channel is increased, then peak electrical fields are reduced, but electrical performance may deteriorate
Solution Approach 1:
The patent applies local quality by creating an inhomogeneous sheet resistance distribution in the conduction channel, specifically increasing resistance in the region between gate and drain electrodes. This is achieved by reducing the layer thickness of the second semiconductor layer or implanting foreign atoms in this specific region, thereby locally reducing peak electrical fields without affecting the entire conduction channel uniformly, thus maintaining output power while improving reliability
Solution Approach 2:
The patent applies partial action by increasing sheet resistance only in the specific region between gate and drain electrodes where peak fields occur, rather than uniformly across the entire conduction channel. This selective modification reduces peak electrical fields to acceptable levels while maintaining adequate electrical performance in other regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces peak electrical fields, thereby improving the long-term stability and reliability of GaN HEMT components while maintaining or increasing output power without risking damage.
Implementation Method 1
HEMT components contain a conduction channel of a very slight layer thickness, with a quasi two-dimensional electron gas, in which the electrons demonstrate very high mobility, at a layer boundary between two semiconductor layers that are deposited epitactically one above the other, with different band intervals
Implementation Method 2
a layer sequence SK, SB, SC is produced in which a first semiconductor layer SK, in particular a GaN layer, is precipitated onto a substrate, with a second semiconductor layer SB, in particular an AlGaN layer, being precipitated onto the first semiconductor layer SK
Implementation Method 3
implanting foreign atoms, to reduce peak electrical fields and enhance stability without compromising output power
Data Source
AI summary
For an HEMT component, in particular on the basis of GaN, it is proposed, for the purpose of reducing field spikes in the conduction channel, in a partial section of the conduction channel between gate electrode and drain electrode, to set the sheet resistance of the conduction channel such that it is higher than in adjacent regions. Various measures for subsequently increasing the sheet resistance in an area-selective manner are specified.