GaN-on-Si HEMT with Local Quality Layer Thickness Control
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Solution Overview
Problem
Current semiconductor devices, particularly Gallium nitride on silicon (GaN-on-Si) based devices, are not fully satisfactory for high-frequency power applications due to limitations in carrier channel formation and resistance control, which affects their performance in radio frequency (RF) applications.
Innovation Solution
A semiconductor structure is developed with multiple III-V compound layers and an insulating layer, where the thickness of specific layers is adjusted to form carrier channels and control resistance, enabling the formation of high electron mobility transistors (HEMT) and integrated resistors, allowing for improved power gain and reduced circuit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If GaN-on-Si based devices are used for high-frequency power applications, then power gain is improved, but resistance control and carrier channel formation are insufficient
Solution Approach 1:
The patent applies local quality by creating different layer thicknesses in different regions of the semiconductor structure. Specifically, the first thickness of the second III-V compound layer in the first region is different from the second thickness in the second region, allowing optimized carrier channel formation and resistance control in each region while maintaining high power gain performance
Solution Approach 2:
The patent changes physical parameters by varying the thickness of III-V compound layers to control carrier channel properties. By adjusting the first and second thicknesses of the second III-V compound layer, the invention optimizes electron mobility and resistance characteristics for high-frequency power applications
2Reliability
If multiple III-V compound layers with different thicknesses are used to form carrier channels, then electron mobility is improved, but device complexity increases
Solution Approach 1:
The patent segments the semiconductor structure into distinct regions (first region and second region) with different layer thicknesses. This segmentation allows independent optimization of carrier channel properties in each region while maintaining a systematic fabrication approach that manages device complexity
Solution Approach 2:
The patent uses composite material structures combining multiple III-V compound layers (such as AlGaN and GaN) with different compositions and thicknesses. This composite approach enables tailored carrier channel formation and resistance control while leveraging the beneficial properties of each material system
3Area of stationary object
If HEMT devices and resistors are integrated in the same semiconductor structure, then circuit area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent merges HEMT devices and resistors into a single integrated semiconductor structure by forming both components in different regions of the same substrate. This integration reduces overall circuit area while using the same fabrication processes for both device types
Solution Approach 2:
The patent applies local quality by creating different layer thicknesses in different regions - the first thickness in the first region for HEMT devices and the second thickness in the second region for resistors. This regional differentiation enables precise control of electrical properties for each device type while maintaining a unified manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure enhances high electron mobility and resistance control, leading to improved performance in RF applications and potential cost reduction by integrating HEMT devices with resistors, offering design flexibility and reduced material requirements.
Implementation Method 1
Gallium nitride transistor devices provide for a high electron mobility in a two-dimensional electron gas (2-DEG) located near the interface of a AlGaN and a GaN heterostructure interface
Implementation Method 2
The first carrier channel is formed at the interface between the first III-V compound layer and the second III-V compound layer
Implementation Method 3
the insulating layer is formed by implanting oxygen or nitrogen into the III-V compound layer between the first region and the second region
Data Source
AI summary
A semiconductor structure includes a substrate, a first III-V compound layer, a second III-V compound layer, a third III-V compound layer, and a fourth III-V compound layer. The top of the substrate includes a first region and a second region. The first III-V compound layer is in the first region. The second III-V compound layer is disposed over the first III-V compound layer. A first carrier channel is formed between the first III-V compound layer and the second III-V compound layer. The second III-V compound layer has a first thickness. The third III-V compound layer is in the second region. The fourth III-V compound layer is disposed over the third III-V compound layer. A second carrier channel is formed between the fourth III-V compound layer and the third III-V compound layer. The fourth III-V compound layer has a second thickness less than the first thickness.