GaN HEMT TiN Gate Layer Composition Against Etching and Oxidation
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Solution Overview
Problem
Existing high electron mobility transistors (HEMTs) fabricated from GaN-based materials face challenges in maintaining the integrity of the titanium nitride (TiN) layer during manufacturing processes, leading to issues with etching and oxidation.
Innovation Solution
The method involves forming a TiN layer with a nitrogen to titanium (N/Ti) ratio greater than 1 and adjusting the (200)/(111) orientation ratio to enhance the strength and protection of the p-type semiconductor layer. This is achieved by optimizing the semiconductor equipment power and gas ratio during TiN layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional TiN layer is formed during HEMT fabrication, then the layer provides basic protection and electrical function, but the layer suffers from etching and oxidation issues leading to integrity loss
Solution Approach 1:
The patent applies parameter changes by controlling the nitrogen to titanium (N/Ti) ratio greater than 1 during TiN layer formation and adjusting the (200)/(111) orientation ratio. These parameter modifications transform the TiN layer properties to achieve enhanced anti-etching and anti-oxidation capabilities while maintaining electrical performance
Solution Approach 2:
The patent creates a composite material approach by forming a TiN layer with specific compositional characteristics (N/Ti ratio > 1) and crystallographic orientation properties. This composite structure combines protective properties with electrical functionality, resolving the contradiction between basic protection and resistance to harmful factors
2Reliability
If the TiN layer is optimized for better protection, then anti-etching and anti-oxidation features improve, but the manufacturing process complexity increases
Solution Approach 1:
The patent implements parameter changes during the TiN layer formation process, specifically controlling the N/Ti ratio and (200)/(111) orientation ratio. These parameter adjustments are integrated into the existing manufacturing workflow, enhancing protection features without requiring fundamentally new manufacturing steps
Solution Approach 2:
The patent applies preliminary action by optimizing the TiN layer properties during its formation process itself, rather than requiring subsequent treatment steps. The N/Ti ratio and orientation control are established during deposition, preventing etching and oxidation issues before they occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a TiN layer with improved anti-etching and anti-oxidation features, reducing thickness loss during manufacturing and enhancing the overall performance and reliability of the HEMT.
Implementation Method 1
The approach results in a TiN layer with improved anti-etching and anti-oxidation features
Implementation Method 2
The approach results in a TiN layer with improved anti-etching and anti-oxidation features
Implementation Method 3
forming a titanium nitride (TiN) layer on the p-type semiconductor layer
Implementation Method 4
forming a titanium nitride (TiN) layer on the p-type semiconductor layer
Data Source
AI summary
A method for fabricating high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a titanium nitride (TiN) layer on the p-type semiconductor layer as a nitrogen to titanium (N/Ti) ratio of the TiN layer is greater than 1, forming a passivation layer on the TiN layer and the barrier layer, removing the passivation layer to form an opening, forming a gate electrode in the opening, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer.