GaN HEMT Trap Circuit Model for Accurate RF Characteristic Calculation
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Solution Overview
Problem
Conventional large signal equivalent circuit models for transistors, particularly GaN HEMT on Si devices, fail to accurately calculate RF characteristics due to the neglect of lattice mismatch-induced traps, leading to inaccuracies in drain current, drain efficiency, and power added efficiency near saturation power.
Innovation Solution
Incorporating a trap circuit with parallel resistor-capacitor-diode configurations between the drain and source terminals in the large signal equivalent circuit model to account for the trap effects, allowing for feedback of potential to key parameters, thereby improving calculation accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional large signal equivalent circuit model is used, then the calculation speed is high, but the calculation accuracy of drain current, drain efficiency, and power added efficiency near saturation power is poor
Solution Approach 1:
The trap effect is segmented from the conventional equivalent circuit model and represented by a dedicated trap circuit consisting of parallel resistor-capacitor-diode configurations. This segmentation allows the trap effect to be modeled separately and incorporated into the overall circuit model, improving calculation accuracy for drain current, drain efficiency, and power added efficiency without significantly increasing overall model complexity.
Solution Approach 2:
A trap circuit is introduced as an intermediary element between the drain and source terminals to mediate the trap effect. The trap circuit includes parallel resistor-capacitor-diode configurations that act as intermediaries to capture and represent the physical trap effects at the GaN-Si interface, thereby improving the accuracy of RF characteristic calculations.
2Reliability
If the trap effect is not considered in the model, then the model simplicity is maintained, but the calculation results deviate from measurement results near saturation power
Solution Approach 1:
A trap circuit is introduced as an intermediary element between the drain and source terminals to mediate the trap effect. The trap circuit includes parallel resistor-capacitor-diode configurations that act as intermediaries to capture and represent the physical trap effects at the GaN-Si interface, thereby improving the accuracy of RF characteristic calculations.
Solution Approach 2:
The model incorporates variable parameters for the trap circuit elements (resistors, capacitors, diodes) that can be adjusted to match measurement data. By changing these parameters, the model can accurately represent different trap conditions and improve agreement between calculation and measurement results for drain current, drain efficiency, and power added efficiency.
Data Source
AI summary
A transistor characteristic calculation apparatus using a large signal equivalent circuit model has a buffer trap circuit provided between a drain terminal and a source terminal such that a parallel circuit including a resistor and a capacitor, a diode, and another parallel circuit including a resistor and a capacitor are in turn connected in series.