GaN Unit Interconnect Layout for Stable Multi-Layer Packaging
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently integrating gallium nitride (GaN) units with external wiring layers, leading to potential connectivity issues and suboptimal performance.
Innovation Solution
The semiconductor device incorporates a specific arrangement of GaN units and external wiring layers, including interconnect, drain, source, and gate wiring layers, with precise alignment and electrical connections to enhance integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If GaN units are integrated with external wiring layers using conventional methods, then device complexity is reduced, but connectivity and electrical connection stability deteriorate
Solution Approach 1:
The external wiring layer is divided into multiple separate wiring layers (interconnect wiring layer, drain wiring layer, source wiring layer, gate wiring layer), each performing a specific function. This segmentation allows for optimized electrical connections for each type of signal while maintaining overall device reliability.
Solution Approach 2:
The patent transitions from planar wiring arrangement to a three-dimensional stacked architecture where multiple wiring layers are vertically arranged above the GaN units. This dimensional change enables improved electrical connectivity while managing complexity through vertical integration rather than horizontal expansion.
2Reliability
If multiple wiring layers are arranged above GaN units, then electrical connection stability improves, but manufacturing precision requirements increase
Solution Approach 1:
The substrate is prepared with pre-defined connection regions and pad structures before the wiring layers are formed. This preliminary preparation establishes reference points that guide subsequent wiring layer deposition and alignment, reducing the actual manufacturing precision requirements during the wiring formation process.
Solution Approach 2:
The substrate acts as an intermediary structure that provides mechanical support and electrical connection pathways between the GaN units and the overlying wiring layers. This intermediary layer facilitates alignment and reduces the direct precision requirements between upper wiring layers and GaN unit contacts.
3Reliability
If precise alignment of wiring layers is implemented, then connectivity improves, but device complexity increases
Solution Approach 1:
The substrate serves multiple functions simultaneously: it provides mechanical support for the GaN units, establishes electrical connection points, and acts as an alignment reference for the overlying wiring layers. This multi-functionality reduces the need for separate alignment structures, thereby managing device complexity while maintaining connectivity.
Data Source
AI summary
A semiconductor device includes multiple GaN units arranged separately from each other in a first direction in a first encapsulation resin. The GaN unit includes a substrate, a GaN transistor arranged at a substrate front surface side of the substrate, and a post arranged on a source pad, a drain pad, and a gate pad of the GaN transistor and exposed from the first encapsulation resin. The post includes a source post formed on the source pad in one of two adjacent ones of the GaN units in the first direction, and a drain post formed on the drain pad in the other one of the two adjacent ones of the GaN units in the first direction. The semiconductor device includes an interconnect layer arranged on an encapsulation front surface and electrically connects the source post and the drain post.