GaN Inverter Power Density Thermal Management

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Solution Overview

Problem

Current power inverters face challenges in achieving extremely high output power density while managing electromagnetic interference (EMI) noise and switch losses, especially with wideband-gap semiconductors like GaN, which require soft switching and efficient thermal management to prevent overheating.

Innovation Solution

A single-phase, non-insulated miniaturized DC/AC power inverter design utilizing GaN semiconductors with a full-bridge topology, combined mode noise filters, differential mode noise filters, and a ripple-compensating active filter, packaged in a conductive enclosure with optimized thermal management and shielding to maintain low temperatures and high efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If wideband-gap semiconductor switches (GaN) are used to increase switching frequency and improve efficiency, then power density is improved, but EMI noise and switch losses increase

Engineering Contradiction:
Improvepower densityVSAvoidEMI noise
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The patent extracts and separates the EMI filtering function into dedicated common mode and differential mode noise filters. These filters are positioned between the switching circuit and the AC output to isolate the GaN switches' high-frequency switching noise from the output, allowing the use of GaN devices without compromising EMI performance

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an intermediary active filter circuit that compensates for ripple and noise generated by the GaN switches. This active filter acts as a mediator between the high-frequency switching circuit and the output, smoothing the output signal while allowing the switching frequency to remain high for improved power density

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If wideband-gap semiconductor switches (GaN) are used to increase switching frequency, then power density is improved, but switch losses increase requiring soft switching

Engineering Contradiction:
Improvepower densityVSAvoidswitch losses
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The patent employs dynamic control of the GaN switches through pulse-width modulation (PWM) and soft-switching techniques. The switching timing and duration are dynamically adjusted to ensure switches transition smoothly between on and off states, minimizing energy loss during switching while maintaining high switching frequency for improved power density

Inventive Principle:
Principle #15Dynamics

3Power

If miniaturization is pursued to increase power density, then volume is reduced, but thermal management becomes more challenging

Engineering Contradiction:
Improvepower densityVSAvoidthermal management
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent merges multiple functions into integrated components and compact arrangements. The filtering circuits, switching circuitry, and thermal management systems are combined into a tightly integrated package where space is optimized without compromising thermal performance. Heat sinks and cooling channels are integrated directly with power components to maintain efficient heat dissipation in the miniaturized form factor

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from two-dimensional planar layouts to three-dimensional stacked configurations. Power components, filtering elements, and thermal management systems are arranged in vertical layers,充分利用 the third dimension to achieve high power density while maintaining adequate thermal pathways for heat dissipation

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design achieves a power density of over 3000 W/dm³, minimizing EMI noise and switch losses, and maintains an external temperature below 60°C under maximum load, enhancing the reliability and efficiency of the inverter.

Implementation Method 1

a fan blowing in an axial direction to a side face of the casing

Methodology Applied
Scientific EffectForced Convection: Forced Convection

Implementation Method 2

a heatsink

Methodology Applied
Scientific EffectThermal Conduction: Conduction (thermal)

Implementation Method 3

the fan and the component stacked arrangement being designed so as, in operation, the external temperature of the casing does not overcome 60° C.

Methodology Applied
Scientific EffectConvection: Convection

Implementation Method 4

at least one common mode noise EMI filter connected between the DC input and the input of the H full-bridge switching circuit... at least one differential mode noise EMI filter connected, in series with a corresponding common mode noise filter

Methodology Applied
Scientific EffectElectromagnetic Induction: Electromagnetic Induction

Data Source

PatentUS10312801B2High power density inverter (II)
Publication Date: 2019.06.04 CET POWER LUXEMBOURG SA
  • US10312801B2 patent drawing
  • US10312801B2 patent drawing
  • US10312801B2 patent drawing

AI summary

The present invention relates to a single phase, non-insulated, miniaturized DC/AC power inverter having an output power density higher than 3000 W/dm3, wherein said power inverter is packaged in a casing made of an external electrically conductive enclosure containing a fan blowing in an axial direction to a side face of the casing and, in a stacked elevation arrangement, successively from a bottom side to a top side, a layer of active filter capacitors, a heatsink, a layer of wideband semiconductors switches connected to a PCB with thermal vias and a layer of active filtering inductors, the fan and the component stacked arrangement being designed so as, in operation, the external temperature of the casing does not overcome 60° C. in any point, for an ambient temperature of maximum 30° C. under a maximum load of 2 kVA.