GaN Semiconductor Islands for LED Efficiency and Contacting
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Solution Overview
Problem
The efficiency of optoelectronic semiconductor components, such as GaN-based light-emitting diodes, is limited by the droop effect, which causes a significant drop in efficiency as current density increases, and existing core-shell nano-LEDs and micro-LEDs have complex chip processing and electrical contacting issues.
Innovation Solution
A method for producing optoelectronic semiconductor components with radiation-active islands using a semiconductor layer sequence based on III-V composite materials, where islands are grown on a substrate, a separating layer is formed to detach the substrate, and a carrier substrate is attached to facilitate mechanical stability and electrical contacting, allowing for flexible carrier materials and simplified processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If current density is increased to improve power output, then efficiency drops due to the droop effect
Solution Approach 1:
The invention divides the semiconductor component into multiple independent radiation-active islands grown on the substrate. Each island operates as an independent light-emitting unit with its own active zone, allowing current to be distributed across multiple segments rather than concentrated in a single large structure, thereby reducing current density and mitigating the droop effect
Solution Approach 2:
The invention transitions from planar two-dimensional semiconductor layers to three-dimensional vertically structured islands with core-shell configurations. This dimensional change increases the active volume and surface area for light emission while maintaining low current density, enabling higher power output without efficiency loss
2Loss of energy
If core-shell nano-LEDs and micro-LEDs are used to reduce droop effect, then chip processing and electrical contacting become complex
Solution Approach 1:
The semiconductor islands perform multiple functions autonomously: they provide mechanical support to themselves through their vertical structure, serve as their own electrical contacts through doped contact zones at the base, and require minimal external processing. The islands self-align and self-support on the substrate, eliminating the need for complex chip mounting and wiring procedures
Solution Approach 2:
The invention extracts the radiation-active islands from the substrate using a separating layer, allowing the islands to be transferred to flexible carrier materials. This extraction simplifies the overall device structure by separating the light-emitting function from the substrate, enabling flexible integration and simplified electrical contacting through the carrier material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the efficiency of optoelectronic semiconductor components by reducing mechanical instability and simplifying electrical contacting, enabling higher current densities without efficiency drops and allowing for flexible and stable semiconductor components.
Implementation Method 1
The semiconductor component is configured for producing ultraviolet radiation, visible light and/or near-infrared radiation during operation
Implementation Method 2
detaching the growth substrate from the islands, for instance by means of radiation, wherein, during the detachment, at least a part of the separating layer is destroyed and/or at least temporarily softened, for instance by the laser radiation
Data Source
AI summary
In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.