GaN Power Semiconductor Isolation Structure for Current Collapse
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Solution Overview
Problem
Current GaN-based power semiconductor devices suffer from current collapse due to trapped carriers between the gate and drain electrodes, leading to increased resistance and 'memory' effects in conduction current, which affects their reliability and performance.
Innovation Solution
Incorporating an isolation region with insulation material at the bather layer adjacent to the drain electrode and a field plate electrically connected to the drain electrode on an insulation film, which reduces current collapse and maintains breakdown voltage, while also reducing the distance between the source and drain electrodes to enhance integration and on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an isolation region with insulation material is incorporated at the barrier layer adjacent to the drain electrode, then current collapse is reduced and breakdown voltage is maintained, but device complexity increases
Solution Approach 1:
The barrier layer is segmented by introducing an isolation region with insulation material at a specific location adjacent to the drain electrode. This segmentation prevents trapped carriers from forming continuous paths between gate and drain, thereby reducing current collapse while maintaining device functionality.
Solution Approach 2:
An insulation film is introduced as an intermediary layer between the gate electrode and drain electrode regions. This intermediary prevents direct interaction between trapped carriers and the channel, reducing current collapse effects while allowing the device to maintain its breakdown voltage characteristics.
2Productivity
If the distance between source and drain electrodes is reduced for high integration, then device integration is improved, but on-resistance increases
Solution Approach 1:
Different regions of the device are given different properties: the channel region maintains high electron mobility for low resistance, while the isolation region adjacent to the drain provides insulation to prevent current collapse. This local differentiation allows reduced source-drain distance for integration while maintaining reliability through targeted functional zones.
Data Source
AI summary
A power semiconductor device and a method of manufacturing the power semiconductor device are disclosed. The power semiconductor device includes an isolation region at or in a bather layer in contact with or adjacent to a drain electrode to reduce or prevent current collapse between a gate electrode and the drain electrode.