GaN Laser Diode Array with Beam Deflectors for 2D Emission
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Solution Overview
Problem
Current manufacturing techniques for edge-emitting laser diodes restrict the production of two-dimensional arrays due to geometrical limitations and inefficiencies in heat dissipation, as well as challenges in achieving high optical power and precise light beam directionality, particularly with nitride semiconductor materials.
Innovation Solution
A method involving the use of a structured gallium nitride bulk substrate with etched light beam deflectors, where the deflectors consist of parallel and oblique planes tilted at specific angles, allowing for efficient light beam redirection and increased optical power, and employing a thick GaN substrate for improved heat dissipation, along with epitaxial growth and reflective coatings to enhance light reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If edge-emitting laser diode configuration is used, then high optical power is achieved, but two-dimensional array manufacturing is limited
Solution Approach 1:
The patent introduces light beam deflectors that redirect emitted light by 90 degrees, transforming the effective emission direction from parallel to perpendicular relative to the substrate plane. This dimensional redirection enables two-dimensional array configuration while preserving the high optical power characteristics of edge-emitting lasers, as the deflectors are integrated into each laser structure without significantly reducing output power
2Ease of manufacture
If conventional manufacturing methods are used, then simple processing is achieved, but manufacturing precision for two-dimensional arrays is insufficient
Solution Approach 1:
The patent incorporates light beam deflectors during the epitaxial growth process itself, rather than adding them as separate components afterward. This preliminary integration ensures precise spatial positioning and alignment of the deflectors relative to the laser active regions, achieving high manufacturing precision for two-dimensional arrays while maintaining compatibility with conventional semiconductor manufacturing workflows
3Volume of moving object
If thin substrate is used, then device miniaturization is achieved, but heat dissipation efficiency deteriorates
Solution Approach 1:
The patent introduces a heat sink structure with high thermal conductivity material as an intermediary between the laser active regions and the substrate. This heat sink acts as a thermal conduit that efficiently transfers heat away from the compact device structure, enabling effective heat dissipation even in miniaturized two-dimensional array configurations where direct substrate contact would be insufficient
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-efficiency two-dimensional laser diode arrays with enhanced optical power and improved heat management, overcoming previous limitations in nitride semiconductor technology.
Implementation Method 1
light beam deflectors configured to change the direction of emitted light beams from parallel to perpendicular in relation to the plane defined by the layer constituting the light generating active region, wherein the light beam deflectors comprise two planes, namely a parallel deflector plane in relation to the GaN substrate and an oblique deflector plane tilted at an angle of 40°-50° in relation to the surface of the GaN substrate
Implementation Method 2
employing a thick GaN substrate for improved heat dissipation
Implementation Method 3
employing a thick GaN substrate for improved heat dissipation, along with epitaxial growth and reflective coatings to enhance light reflection
Data Source
AI summary
The invention relates to a method for manufacturing a two-dimensional laser diode array comprising preparing a structured gallium nitride bulk substrate, a lower cladding layer, a lower light guide layer, a light-emitting layer, electron blocking layers, an upper light guide layer, an upper cladding layer, a subcontact layer, and includes forming, in GaN substrate (1) with thickness of at least 200 μm, light beam deflectors (15) by applying photoresist on the GaN substrate (1), irradiating it, developing it, and subsequently etching the applied layer in order to obtain the light beam deflectors (15). The invention relates also to a two-dimensional laser diode array manufactured using the method according to the invention.