GaN Laser Sidewall Reflector Structure for Higher Optical Power Density
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Solution Overview
Problem
There is a need to enhance the optical power density of GaN-based lasers to meet increasing industry demands, as existing GaN-based semiconductor lasers have limitations in efficiency and light emission area.
Innovation Solution
The design includes a GaN-based laser with reflectors on the side surfaces of the active layer unit and isolation structures on the remaining sidewalls, along with a manufacturing method that forms strip-shaped light-emitting structures on an epitaxial substrate, allowing for improved reflectivity and reduced surface defects, which increases optical power density and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If light is emitted from upper and lower surfaces of the active layer, then the light emission area is large, but the optical power density is low
Solution Approach 1:
The patent transitions from conventional vertical light emission (upper and lower surfaces) to lateral light emission from side surfaces of the active layer. This dimensional change enables concentrated light output from the lateral direction, achieving high optical power density while maintaining sufficient emission area through the side surface geometry.
2Illumination intensity
If reflectors are added on side surfaces to increase optical power density, then the light emission becomes more concentrated, but the device complexity increases
Solution Approach 1:
The reflector structure is integrated directly with the side surfaces of the active layer, merging the light-emitting function and the light-concentrating function into a unified structure. This integration achieves high optical power density without adding separate, complex external reflector systems.
3Reliability
If isolation structures are added on remaining sidewalls, then surface defects are reduced and luminous efficiency is improved, but the manufacturing complexity increases
Solution Approach 1:
The side surfaces of the active layer are segmented into functional zones: some surfaces serve as light-emitting surfaces with reflectors, while remaining surfaces are covered by isolation structures. This segmentation effectively isolates defect-prone areas from the light emission path, improving luminous efficiency while maintaining a relatively simple overall structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases optical power density and luminous efficiency by emitting light from side surfaces and reducing surface defects, thereby enhancing the performance of GaN-based lasers beyond traditional upper and lower surface emission.
Implementation Method 1
a first reflector is provided on the first sidewall and a second reflector is provided on the second sidewall
Data Source
AI summary
A GaN-based laser and a manufacturing method thereof are provided in this present disclosure. The GaN-based laser includes: an epitaxial substrate unit; and a light-emitting unit located on the epitaxial substrate unit, where the light-emitting unit includes an active layer unit, which is arranged parallel to the epitaxial substrate unit; the light emitting unit includes a pair of first sidewall and second sidewall, which are opposite to each other; a first reflector is provided on the first sidewall and a second reflector is provided on the second sidewall, and the first reflector or second reflector corresponds to the light emitting surface. The first reflector and the second reflector are arranged on the side surfaces of the active layer unit.