GaN Layered Semiconductor Radial Concentration Control
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Solution Overview
Problem
The yield of semiconductor devices produced using GaN-based layered semiconductors is affected by variations in n-type carrier concentration, leading to decreased performance in breakdown voltage and on-resistance, particularly in Schottky barrier diodes.
Innovation Solution
A GaN-based layered semiconductor with a controlled n-type carrier concentration, where the average is 1.5×10^16 cm^-3 or less and the difference between maximum and minimum concentrations is 1.5×10^15 cm^-3 or less, is formed to improve yield by reducing radial variation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the n-type carrier concentration in the semiconductor layer is not controlled, then the manufacturing process is simpler, but the yield of semiconductor devices decreases due to performance variations
Solution Approach 1:
The patent applies parameter changes by precisely controlling the n-type carrier concentration within the range of 1.5×10^16 cm^-3 or less and maintaining the difference between maximum and minimum concentrations at 1.5×10^15 cm^-3 or less. This quantitative parameter control during the semiconductor layer formation process directly improves manufacturing precision while ensuring device yield and performance consistency.
2Reliability
If the n-type carrier concentration varies radially, then the manufacturing process is easier, but the breakdown voltage and on-resistance performance deteriorates
Solution Approach 1:
The patent applies local quality by ensuring that the n-type carrier concentration is uniformly distributed across the radial direction of the semiconductor layer. By maintaining the carrier concentration difference at 1.5×10^15 cm^-3 or less throughout the radial direction, the patent ensures consistent breakdown voltage and on-resistance properties across different locations of the semiconductor device, thereby improving reliability.
3Productivity
If the carrier concentration is not controlled, then the production efficiency is lower, but the process control is simpler
Solution Approach 1:
The patent resolves this contradiction by establishing specific parameter ranges for n-type carrier concentration (1.5×10^16 cm^-3 or less) and its radial variation (difference of 1.5×10^15 cm^-3 or less). By controlling these parameters during the semiconductor layer formation process, the patent improves production efficiency and device yield while maintaining manageable process control through defined quantitative targets.
Data Source
AI summary
A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×1016 cm−3 or less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×1015 cm−3 or less.