GaN LED Array Control Circuit Integration

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Solution Overview

Problem

The manufacturing of optoelectronic devices, such as gallium nitride LED arrays, faces challenges in aligning control circuits with LED arrays, especially as pixel pitch decreases, limiting resolution and integration density due to stringent alignment accuracy requirements during assembly.

Innovation Solution

A method involving the formation of an active diode stack with a doped semiconductor structure, followed by the creation of MOS transistors and trenches to delimit pixels, allowing for the formation of metallization contacts and a metal-insulator-metal stack, which simplifies the alignment process and enhances integration density by reducing thermal budget constraints.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the control circuit and LED array are separately manufactured and then hybridized by stacking, then the device can be assembled with modular components, but the alignment accuracy deteriorates making it difficult to achieve precise positioning of LEDs on metal pads

Engineering Contradiction:
Improvemodular assemblyVSAvoidalignment accuracy
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent merges the control circuit and LED array into a single integrated structure where the control circuit is formed directly on the same substrate as the LED array. This integration eliminates the need for separate stacking and alignment operations, thereby resolving the contradiction between modular assembly ease and alignment precision.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The control circuit components are formed in advance on the substrate before the LED array is assembled. By pre-forming the control circuit with metal pads in their final positions, the subsequent LED placement can be precisely aligned without requiring high-precision alignment operations during assembly.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If the pitch between pixels is decreased to increase resolution and integration density, then the device resolution improves, but the alignment accuracy requirement becomes more stringent and difficult to achieve

Engineering Contradiction:
Improvedevice resolutionVSAvoidalignment accuracy requirement
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

By integrating the control circuit with the LED array on the same substrate, the patent eliminates the alignment step that becomes increasingly difficult as pixel pitch decreases. The control circuit elements are formed in their final positions relative to the LED array, allowing high-resolution devices to be manufactured without stringent alignment requirements.

Inventive Principle:
Principle #5Merging (Combining)

3Device complexity

If traditional hybridization methods are used to assemble control circuit and LED array, then the manufacturing process is simple in terms of steps, but the alignment process becomes a bottleneck limiting productivity

Engineering Contradiction:
Improvemanufacturing process stepsVSAvoidmanufacturing efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent combines the formation of the control circuit and LED array into a single integrated manufacturing process on the same substrate. This eliminates the separate stacking and alignment operations that bottleneck productivity, thereby resolving the contradiction between process simplicity and manufacturing efficiency.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11552125B2Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes
Publication Date: 2023.01.10 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • US11552125B2 patent drawing
  • US11552125B2 patent drawing
  • US11552125B2 patent drawing

AI summary

A method of manufacturing an optoelectronic device, including the steps of: a) providing an active diode stack comprising a first doped semiconductor layer of a first conductivity type and a second doped semiconductor layer of the first conductivity type, coating the upper surface of the first layer; b) arranging a third semiconductor layer on the upper surface of the active stack; c) after step b), forming at least one MOS transistor inside and on top of the third semiconductor layer; and d) after step b), before or after step c), forming trenches vertically extending from the upper surface of the third layer and emerging into or onto the upper surface of the first layer and delimiting a plurality of pixels, each including a diode and an elementary diode control cell.