GaN Light-Emitting Element Oxygen Side Surface Treatment
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Solution Overview
Problem
Conventional light-emitting elements face challenges in maintaining stable electrical characteristics and high light extraction efficiency due to leakage currents and degradation of semiconductor layers, particularly at the interface between protective layers and semiconductor surfaces.
Innovation Solution
The light-emitting element incorporates a semiconductor structure with a first n-type layer and a p-type layer, both containing gallium and nitrogen, where oxygen is introduced to the side surfaces to form bonds of gallium and oxygen, increasing the electrical resistance and reducing leakage currents, thereby stabilizing the electrical characteristics and enhancing light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thick protective layers are used to protect semiconductor surfaces, then reliability is improved, but light extraction efficiency deteriorates
Solution Approach 1:
The patent applies local quality by introducing oxygen bonds specifically at the side surfaces of the semiconductor layers where leakage currents occur, rather than uniformly throughout the structure. This localized modification at critical interfaces provides protection against leakage without requiring thick protective layers that would block light extraction paths.
Solution Approach 2:
The oxygen bonds act as an intermediary layer at the semiconductor side surfaces, mediating between the semiconductor material and the external environment. This intermediary oxygen layer suppresses leakage currents by passivating surface states without forming a thick protective barrier that would interfere with light extraction efficiency.
2Ease of manufacture
If conventional semiconductor layers are used without oxygen introduction, then manufacturing is simpler, but leakage currents increase
Solution Approach 1:
The patent changes the chemical composition parameter of the semiconductor side surfaces by introducing oxygen bonds. This parameter change (adding oxygen) modifies the electrical properties of the surface region, increasing electrical resistance and suppressing leakage currents while maintaining compatibility with existing manufacturing processes.
3Ease of manufacture
If the first side surface region includes gallium-nitrogen bonds, then manufacturing is easier, but electrical resistance is insufficient
Solution Approach 1:
The patent creates a composite structure at the side surfaces by combining gallium-nitrogen bonds (from the semiconductor material) with introduced oxygen bonds. This composite bonding structure at the interface provides both the structural integrity of the original semiconductor and the high electrical resistance needed to suppress leakage currents.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of oxygen bonds at the semiconductor surfaces suppresses leakage currents and alters the semiconductor layers, leading to improved reliability and light extraction efficiency without the need for thick protective layers, thus stabilizing the electrical characteristics of the light-emitting element.
Implementation Method 1
a first introducing oxygen to a portion of the semiconductor stacked body including the side surface by processing, in an atmosphere including oxygen, the semiconductor stacked body after the first exposing
Data Source
AI summary
A light-emitting element includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a first electrode, and a second electrode. The first semiconductor layer includes gallium and nitrogen and is of an n-type. The second semiconductor layer includes gallium and nitrogen and is of a p-type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer includes a first partial region and a first side surface region. The first partial region includes a first surface contacting the first electrode. The first side surface region includes a first side surface crossing a plane perpendicular to a first direction. The first direction is from the second semiconductor layer toward the first semiconductor layer.